UTT120N04 Todos los transistores

 

UTT120N04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UTT120N04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 120 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 140 nS

Conductancia de drenaje-sustrato (Cd): 575 pF

Resistencia drenaje-fuente RDS(on): 0.0035 Ohm

Empaquetado / Estuche: TO-263, TO-220

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UTT120N04 Datasheet (PDF)

1.1. utt120n04.pdf Size:128K _utc

UTT120N04
UTT120N04

UNISONIC TECHNOLOGIES CO., LTD UTT120N04 Preliminary Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed. FEATURES * RDS(ON)< 3.8m? @ VGS=10V, ID=60A * High switching speed * Improved dv/dt capab

2.1. utt120n06.pdf Size:127K _utc

UTT120N04
UTT120N04

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 4.1. utt120p06.pdf Size:125K _utc

UTT120N04
UTT120N04

UNISONIC TECHNOLOGIES CO., LTD UTT120P06 Preliminary Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and hi

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