UTT30N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UTT30N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 79 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO-220 TO-252

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UTT30N06 datasheet

 ..1. Size:297K  utc
 utt30n06.pdf pdf_icon

UTT30N06

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotive applications of power suppl

 7.1. Size:176K  utc
 utt30n08.pdf pdf_icon

UTT30N06

UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary Power MOSFET 80V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy

 8.1. Size:196K  utc
 utt30n10.pdf pdf_icon

UTT30N06

UNISONIC TECHNOLOGIES CO., LTD UTT30N10 Preliminary Power MOSFET 30A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30N10 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT30N10 is suitable for high voltage synchronous rectifier and DC/DC co

 8.2. Size:262K  inchange semiconductor
 utt30n10.pdf pdf_icon

UTT30N06

Isc N-Channel MOSFET Transistor UTT30N10 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

MOSTRAR MÁS

Otros transistores... UTM3023, UTT100N05, UTT108N03, UTT120N04, UTT150N03, UTT200N03, UTT20N06, UTT220N03, IRFZ48N, UTT3205, UTT36N05, UTT40N03, UTT80N05, K596, K1109, TF202, TF212