MTB02N03Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB02N03Q8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 898 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm

Encapsulados: SOP-8

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MTB02N03Q8 datasheet

 ..1. Size:311K  cystek
 mtb02n03q8.pdf pdf_icon

MTB02N03Q8

Spec. No. C575Q8 Issued Date 2012.01.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB02N03Q8 ID 25A RDSON@VGS=10V, ID=25A 2.2m (typ) RDSON@VGS=4.5V, ID=15A 2.3m (typ) Description The MTB02N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

 6.1. Size:331K  cystek
 mtb02n03h8.pdf pdf_icon

MTB02N03Q8

Spec. No. C575H8 Issued Date 2012.05.09 CYStech Electronics Corp. Revised Date 2012.11.12 Page No. 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB02N03H8 ID 75A RDS(ON)@VGS=10V, ID=30A 2.6 m (typ) RDS(ON)@VGS=4.5V, ID=25A 3.5 m (typ) Description The MTB02N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combin

 6.2. Size:279K  cystek
 mtb02n03j3.pdf pdf_icon

MTB02N03Q8

Spec. No. C575J3 Issued Date 2012.01.03 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB02N03J3 ID 136A RDS(ON)@VGS=10V, ID=45A 2.7m (typ) RDS(ON)@VGS=4.5V, ID=36A 3.8m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS com

 9.1. Size:478K  cystek
 mtb028n10qncq8.pdf pdf_icon

MTB02N03Q8

Spec. No. C168Q8 Issued Date 2016.11.18 CYStech Electronics Corp. Revised Date 2016.11.22 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.6A RDS(ON)@VGS=10V, ID=4A 19.3 m (typ) Features RDS(ON)@VGS=4.5V, ID=3A 27.0m (typ) Single Drive Requirement Low On-resistance Fast Switching Characterist

MOSTRAR MÁS

Otros transistores... MTA25N02J3, MTA340N02N3, MTA55N02N3, MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, AO4407A, MTB030N04N3, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8