MTB03N03H8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB03N03H8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 635 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: DFN5X6

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MTB03N03H8 datasheet

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 mtb03n03h8.pdf pdf_icon

MTB03N03H8

Spec. No. C788H8 Issued Date 2010.09.23 CYStech Electronics Corp. Revised Date 2010.10.06 Page No. 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB03N03H8 ID 75A RDSON(max) 3m Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 9.1. Size:625K  cystek
 mtb030n04n3.pdf pdf_icon

MTB03N03H8

Spec. No. C884N3 Issued Date 2014.08.20 CYStech Electronics Corp. Revised Date Page No. 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3m RDSON(TYP) VGS=4.5V, ID=7.3A 34.2m Features Low on-resistance Low voltage gate drive Excellent thermal and electrical capabilities Pb-free l

 9.2. Size:477K  cystek
 mtb030n10rq8.pdf pdf_icon

MTB03N03H8

Spec. No. C053Q8 Issued Date 2016.11.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 BVDSS 100V ID @ TA=25 C, VGS=10V 6.2A RDS(ON)@VGS=10V, ID=10A 22.7 m (typ) Features RDS(ON)@VGS=4.5V, ID=8A 27.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Rep

 9.3. Size:655K  cystek
 mtb032p06v8.pdf pdf_icon

MTB03N03H8

Spec. No. C924V8 Issued Date 2013.06.06 CYStech Electronics Corp. Revised Date 2014.08.11 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29m (typ) RDSON@VGS=-4.5V, ID=-4A 33m (typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

MOSTRAR MÁS

Otros transistores... MTA65N15H8, MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, AO4468, MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3