MTB03N03H8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB03N03H8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 48 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 635 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: DFN5X6

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MTB03N03H8 Datasheet (PDF)

..1. Size:221K cystek
mtb03n03h8.pdf

Spec. No. : C788H8 Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.10.06 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB03N03H8ID 75ARDSON(max) 3m Description The MTB03N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

9.1. Size:625K cystek
mtb030n04n3.pdf

Spec. No. : C884N3 Issued Date : 2014.08.20 CYStech Electronics Corp. Revised Date : Page No. : 1/ 9 40V N-Channel Enhancement Mode MOSFET BVDSS 40V MTB030N04N3 ID @VGS=10V 8A VGS=10V, ID=7.9A 25.3m RDSON(TYP) VGS=4.5V, ID=7.3A 34.2m Features Low on-resistance Low voltage gate drive Excellent thermal and electrical capabilities Pb-free l

9.2. Size:477K cystek
mtb030n10rq8.pdf

Spec. No. : C053Q8 Issued Date : 2016.11.04 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 BVDSS 100VID @ TA=25C, VGS=10V 6.2A RDS(ON)@VGS=10V, ID=10A 22.7 m(typ)Features RDS(ON)@VGS=4.5V, ID=8A 27.5 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Rep

9.3. Size:655K cystek
mtb032p06v8.pdf

Spec. No. : C924V8 Issued Date : 2013.06.06 CYStech Electronics Corp. Revised Date : 2014.08.11 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTB032P06V8 ID -25A RDSON@VGS=10V, ID=-6A 29m(typ) RDSON@VGS=-4.5V, ID=-4A 33m(typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

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