MTB04N03AQ8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB04N03AQ8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 494 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm

Encapsulados: SOP-8

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MTB04N03AQ8 datasheet

 ..1. Size:318K  cystek
 mtb04n03aq8.pdf pdf_icon

MTB04N03AQ8

Spec. No. C889Q8 Issued Date 2013.12.02 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03AQ8 ID @VGS=10V 20A RDSON@VGS=10V, ID=18A 4.4m (typ) RDSON@VGS=4.5V, ID=12A 5.8m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt

 6.1. Size:338K  cystek
 mtb04n03j3.pdf pdf_icon

MTB04N03AQ8

Spec. No. C789J3 Issued Date 2011.12.12 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB04N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 3.1m (typ) RDS(ON)@VGS=4.5V, ID=24A 4.7m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free l

 6.2. Size:310K  cystek
 mtb04n03q8.pdf pdf_icon

MTB04N03AQ8

Spec. No. C789Q8 Issued Date 2011.12.16 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03Q8 ID 25A RDSON@VGS=10V, ID=18A 3.5m (typ) RDSON@VGS=4.5V, ID=12A 4.8m (typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

 6.3. Size:297K  cystek
 mtb04n03e3.pdf pdf_icon

MTB04N03AQ8

Spec. No. C889E3 Issued Date 2013.02.20 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB04N03E3 ID 115A 3.8m VGS=10V, ID=30A RDSON(TYP) 6.1m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

MOSTRAR MÁS

Otros transistores... MTA65N20H8, MTA90N03ZN3, MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, MTB03N03H8, IRF730, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3, MTB05N03HQ8