MTB04N03H8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB04N03H8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 438 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: DFN5X6

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MTB04N03H8 datasheet

 ..1. Size:443K  cystek
 mtb04n03h8.pdf pdf_icon

MTB04N03H8

Spec. No. C789H8 Issued Date 2010.09.23 CYStech Electronics Corp. Revised Date 2014.04.24 Page No. 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03H8 ID 75A RDS(ON)@VGS=10V, ID=30A 3.2 m (typ) RDS(ON)@VGS=4.5V, ID=25A 4.9 m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynami

 6.1. Size:338K  cystek
 mtb04n03j3.pdf pdf_icon

MTB04N03H8

Spec. No. C789J3 Issued Date 2011.12.12 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB04N03J3 ID 75A RDS(ON)@VGS=10V, ID=30A 3.1m (typ) RDS(ON)@VGS=4.5V, ID=24A 4.7m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free l

 6.2. Size:318K  cystek
 mtb04n03aq8.pdf pdf_icon

MTB04N03H8

Spec. No. C889Q8 Issued Date 2013.12.02 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03AQ8 ID @VGS=10V 20A RDSON@VGS=10V, ID=18A 4.4m (typ) RDSON@VGS=4.5V, ID=12A 5.8m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt

 6.3. Size:310K  cystek
 mtb04n03q8.pdf pdf_icon

MTB04N03H8

Spec. No. C789Q8 Issued Date 2011.12.16 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB04N03Q8 ID 25A RDSON@VGS=10V, ID=18A 3.5m (typ) RDSON@VGS=4.5V, ID=12A 4.8m (typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

MOSTRAR MÁS

Otros transistores... MTB02N03H8, MTB02N03J3, MTB02N03Q8, MTB030N04N3, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3, IRF3205, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3, MTB05N03HQ8, MTB060N06I3, MTB060N15J3