MTB04N03H8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB04N03H8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 438 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET MTB04N03H8

MTB04N03H8 Datasheet (PDF)

..1. Size:443K cystek
mtb04n03h8.pdf

Spec. No. : C789H8 Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2014.04.24 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03H8ID 75ARDS(ON)@VGS=10V, ID=30A 3.2 m(typ)RDS(ON)@VGS=4.5V, ID=25A 4.9 m(typ)Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynami

6.1. Size:338K cystek
mtb04n03j3.pdf

Spec. No. : C789J3 Issued Date : 2011.12.12 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB04N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 3.1m(typ) RDS(ON)@VGS=4.5V, ID=24A 4.7m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free l

6.2. Size:318K cystek
mtb04n03aq8.pdf

Spec. No. : C889Q8 Issued Date : 2013.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03AQ8ID @VGS=10V 20ARDSON@VGS=10V, ID=18A 4.4m(typ) RDSON@VGS=4.5V, ID=12A 5.8m(typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt

6.3. Size:310K cystek
mtb04n03q8.pdf

Spec. No. : C789Q8 Issued Date : 2011.12.16 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03Q8ID 25ARDSON@VGS=10V, ID=18A 3.5m(typ) RDSON@VGS=4.5V, ID=12A 4.8m(typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

6.4. Size:297K cystek
mtb04n03e3.pdf

Spec. No. : C889E3 Issued Date : 2013.02.20 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB04N03E3 ID 115A3.8m VGS=10V, ID=30A RDSON(TYP) 6.1m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

Otros transistores... MTB02N03H8 , MTB02N03J3 , MTB02N03Q8 , MTB030N04N3 , MTB032P06V8 , MTB03N03H8 , MTB04N03AQ8 , MTB04N03E3 , IRF3205 , MTB04N03J3 , MTB04N03Q8 , MTB050N15J3 , MTB050P10E3 , MTB050P10F3 , MTB05N03HQ8 , MTB060N06I3 , MTB060N15J3 .

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