MTB05N03HQ8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB05N03HQ8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 217 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm

Encapsulados: SOP-8

 Búsqueda de reemplazo de MTB05N03HQ8 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTB05N03HQ8 datasheet

 ..1. Size:362K  cystek
 mtb05n03hq8.pdf pdf_icon

MTB05N03HQ8

Spec. No. C738Q8 Issued Date 2009.08.19 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB05N03HQ8 ID 20A RDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 9.1. Size:270K  cystek
 mtb050p10e3.pdf pdf_icon

MTB05N03HQ8

Spec. No. C975E3 Issued Date 2014.07.10 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10E3 ID @ VGS=-10V -40A 46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 9.2. Size:525K  cystek
 mtb050p10f3.pdf pdf_icon

MTB05N03HQ8

Spec. No. C975F3 Issued Date 2014.08.13 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

 9.3. Size:550K  cystek
 mtb050n15j3.pdf pdf_icon

MTB05N03HQ8

Spec. No. C979J3 Issued Date 2014.08.14 CYStech Electronics Corp. Revised Date 2014.08.18 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m (typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p

MOSTRAR MÁS

Otros transistores... MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, MTB050N15J3, MTB050P10E3, MTB050P10F3, 50N06, MTB060N06I3, MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8, MTB06N03V8