MTB06N03I3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTB06N03I3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 53 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 316 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-251

Búsqueda de reemplazo de MOSFET MTB06N03I3

MTB06N03I3 Datasheet (PDF)

..1. Size:265K cystek
mtb06n03i3.pdf

Spec. No. : C441I3 Issued Date : 2012.02.13 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03I3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package

6.1. Size:292K cystek
mtb06n03j3.pdf

Spec. No. : C441J3 Issued Date : 2009.03.02 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 4.5m(typ) RDS(ON)@VGS=5V, ID=24A 7.3m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS complia

6.2. Size:281K cystek
mtb06n03e3.pdf

Spec. No. : C441E3 Issued Date : 2010.08.13 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB06N03E3 ID 102A4.3m VGS=10V, ID=30A RDSON(TYP) 6.6m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

6.3. Size:334K cystek
mtb06n03h8.pdf

Spec. No. : C710H8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.07.31 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03H8ID 75ARDSON(max) 6m Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

6.4. Size:328K cystek
mtb06n03v8.pdf

Spec. No. : C441V8 Issued Date : 2010.10.05 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03V8ID 44A4.5m VGS=10V, ID=14A RDSON(TYP) 6.4m VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rat

6.5. Size:309K cystek
mtb06n03q8.pdf

Spec. No. : C441Q8 Issued Date : 2009.05.07 CYStech Electronics Corp.Revised Date : 2012.08.06 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB06N03Q8ID 23ARDSON@VGS=10V, ID=18A 4.6m(typ)RDSON@VGS=4.5V, ID=12A 6.5m(typ)Description The MTB06N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination

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