MTB13N03Q8 Todos los transistores

 

MTB13N03Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB13N03Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SOP-8
 

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MTB13N03Q8 Datasheet (PDF)

 ..1. Size:319K  cystek
 mtb13n03q8.pdf pdf_icon

MTB13N03Q8

Spec. No. : C728Q8 Issued Date : 2009.07.01 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB13N03Q8ID 11ARDSON(max) 12.5m Description The MTB13N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

 9.1. Size:180K  motorola
 mtb1306.pdf pdf_icon

MTB13N03Q8

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB1306/DAdvance InformationMTB1306HDTMOS E-FET.High Density Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 75 AMPERES30 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.0065 OHMthan any existing surface mount package which allows it to

 9.2. Size:176K  motorola
 mtb1306rev0.pdf pdf_icon

MTB13N03Q8

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB1306/DAdvance InformationMTB1306HDTMOS E-FET.High Density Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 75 AMPERES30 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.0065 OHMthan any existing surface mount package which allows it to

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