MTB13N03Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB13N03Q8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 255 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de MTB13N03Q8 MOSFET
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MTB13N03Q8 datasheet
mtb13n03q8.pdf
Spec. No. C728Q8 Issued Date 2009.07.01 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB13N03Q8 ID 11A RDSON(max) 12.5m Description The MTB13N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o
mtb1306.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB1306/D Advance Information MTB1306 HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 75 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.0065 OHM than any existing surface mount package which allows it to
mtb1306rev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB1306/D Advance Information MTB1306 HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 75 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.0065 OHM than any existing surface mount package which allows it to
Otros transistores... MTB110P10F3, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, IRLB4132, MTB14A03V8, MTB14P03Q8, MTB15P04J3, MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8
History: MTB12P06J3
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