MTB13N03Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB13N03Q8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 255 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SOP-8

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MTB13N03Q8 datasheet

 ..1. Size:319K  cystek
mtb13n03q8.pdf pdf_icon

MTB13N03Q8

Spec. No. C728Q8 Issued Date 2009.07.01 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB13N03Q8 ID 11A RDSON(max) 12.5m Description The MTB13N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

 9.1. Size:180K  motorola
mtb1306.pdf pdf_icon

MTB13N03Q8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB1306/D Advance Information MTB1306 HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 75 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.0065 OHM than any existing surface mount package which allows it to

 9.2. Size:176K  motorola
mtb1306rev0.pdf pdf_icon

MTB13N03Q8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB1306/D Advance Information MTB1306 HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 75 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.0065 OHM than any existing surface mount package which allows it to

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