MTB30N06Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB30N06Q8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 58 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOP-8
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MTB30N06Q8 Datasheet (PDF)
mtb30n06q8.pdf

Spec. No. : C699Q8 Issued Date : 2013.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB30N06Q8 ID 8A25m VGS=10V, ID=6.8A RDSON(TYP) 28m VGS=4.5V, ID=4A Description The MTB30N06Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi
mtb30n06vlrev4.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30N06VL/DDesigner's Data SheetMTB30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.050 OHMarea product abou
mtb30n06vl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30N06VL/DDesigner's Data SheetMTB30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.050 OHMarea product abou
mtb30n06v8.pdf

Spec. No. : C699V8 Issued Date : 2012.03.20 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB30N06V8 ID 6.8AVGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline
Otros transistores... MTB22N04J3 , MTB23C04J4 , MTB24B03Q8 , MTB25A04Q8 , MTB25N04J3 , MTB25P04V8 , MTB25P06FP , MTB30N06J3 , STF13NM60N , MTB30N06V8 , MTB30P06J3 , MTB35N04J3 , MTB3D0N03ATH8 , MTB40N06E3 , MTB40P04J3 , MTB40P06J3 , MTB40P06Q8 .
History: QM2702D | SWF17N80K | SSP2N60A | IPP052NE7N3 | SFG10R75BCF | STB34NM60ND | RQJ0304DQDQA
History: QM2702D | SWF17N80K | SSP2N60A | IPP052NE7N3 | SFG10R75BCF | STB34NM60ND | RQJ0304DQDQA



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