MTBA5N10J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTBA5N10J3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 31 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO-252

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MTBA5N10J3 datasheet

 ..1. Size:250K  cystek
 mtba5n10j3.pdf pdf_icon

MTBA5N10J3

Spec. No. C731J3 Issued Date 2009.07.07 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10J3 ID 10A 150m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTBA5N10J3 TO-252(DPAK)

 6.1. Size:349K  cystek
 mtba5n10fp.pdf pdf_icon

MTBA5N10J3

Spec. No. C731FP Issued Date 2012.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10FP ID 10A RDS(ON)@VGS=10V, ID=10A 151 m (typ) RDS(ON)@VGS=4.5V, ID=10A 165 m (typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

 6.2. Size:327K  cystek
 mtba5n10v8.pdf pdf_icon

MTBA5N10J3

Spec. No. C731V8 Issued Date 2012.08.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10V8 ID 7A 133 m VGS=10V, ID=5A RDSON(TYP) 140 m VGS=4.5V, ID=5A Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch

 6.3. Size:303K  cystek
 mtba5n10q8.pdf pdf_icon

MTBA5N10J3

Spec. No. C731Q8 Issued Date 2013.07.19 CYStech Electronics Corp. Revised Date 2013.11.05 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10Q8 ID 3A 123m VGS=10V, ID=3A RDSON(TYP) 130m VGS=4.5V, ID=2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTBA5N1

MOSTRAR MÁS

Otros transistores... MTB6D0N03ATV8, MTB80N08J3, MTB90P06J3, MTB90P06Q8, MTBA0N10Q8, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, IRFP064N, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3