MTC4503Q8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTC4503Q8

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.9(6.3) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7(8) nS

Cossⓘ - Capacitancia de salida: 160(300) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.036) Ohm

Encapsulados: SOP-8

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MTC4503Q8 datasheet

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 mtc4503q8.pdf pdf_icon

MTC4503Q8

Spec. No. C384Q8 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2014.03.26 Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,

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 mtc4503q8g.pdf pdf_icon

MTC4503Q8

Spec. No. C384Q8 Issued Date 2010.12.10 CYStech Electronics Corp. Revised Date Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

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 mtc4503lq8.pdf pdf_icon

MTC4503Q8

Spec. No. C384Q8 Issued Date 2015.01.06 CYStech Electronics Corp. Revised Date Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

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 mtc4503aq8.pdf pdf_icon

MTC4503Q8

Spec. No. C384Q8 Issued Date 2012.04.30 CYStech Electronics Corp. Revised Date 2014.03.07 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC4503AQ8 BVDSS 30V -30V ID 11A -9.5A RDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS

MOSTRAR MÁS

Otros transistores... MTC2590V8, MTC2804Q8, MTC3585G6, MTC3585N6, MTC3586DFA6, MTC380Q8, MTC4501Q8, MTC4503AQ8, IRFB4227, MTC4503Q8G, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6