MTC4503Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTC4503Q8
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.9(6.3) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 9 nC
trⓘ - Tiempo de subida: 7(8) nS
Cossⓘ - Capacitancia de salida: 160(300) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.036) Ohm
Paquete / Cubierta: SOP-8
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MTC4503Q8 Datasheet (PDF)
mtc4503q8.pdf
Spec. No. : C384Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.03.26 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,
mtc4503q8g.pdf
Spec. No. : C384Q8 Issued Date : 2010.12.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtc4503lq8.pdf
Spec. No. : C384Q8 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtc4503aq8.pdf
Spec. No. : C384Q8 Issued Date : 2012.04.30 CYStech Electronics Corp.Revised Date : 2014.03.07 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC4503AQ8 BVDSS 30V -30VID 11A -9.5ARDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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