MTC4506Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTC4506Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3(3.9) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 8(7) nS
   Cossⓘ - Capacitancia de salida: 58(63) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.057) Ohm
   Paquete / Cubierta: SOP-8

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MTC4506Q8 Datasheet (PDF)

..1. Size:373K cystek
mtc4506q8.pdf

Spec. No. : C780Q8 Issued Date : 2012.05.17 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4506Q8 BVDSS 60V -60VID 5.3A -3.9ARDSON(typ.) @VGS=(-)10V 28m 57m RDSON(typ.) @VGS=(-)4.5V 31m 67m Description The MTC4506Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SO

7.1. Size:355K cystek
mtc4506j4.pdf

Spec. No. : C780J4 Issued Date : 2014.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTC4506J4 BVDSS 60V -60VID 5.4A -4.0ARDSON(typ.) @VGS=(-)10V 25.5m 46.5m RDSON(typ.) @VGS=(-)4.5V 28m 56.6m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free packa

8.1. Size:543K cystek
mtc4503q8g.pdf

Spec. No. : C384Q8 Issued Date : 2010.12.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

8.2. Size:763K cystek
mtc4503lq8.pdf

Spec. No. : C384Q8 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

8.3. Size:520K cystek
mtc4505q8.pdf

Spec. No. : C439Q8 Issued Date : 2009.02.19 CYStech Electronics Corp.Revised Date : 2014.02.06 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4505Q8 BVDSS 30V -30VID 12A -10ARDSON(max) 14m 20mDescription The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with t

8.4. Size:606K cystek
mtc4501q8.pdf

Spec. No. : C385Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,

8.5. Size:775K cystek
mtc4503q8.pdf

Spec. No. : C384Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.03.26 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,

8.6. Size:422K cystek
mtc4503aq8.pdf

Spec. No. : C384Q8 Issued Date : 2012.04.30 CYStech Electronics Corp.Revised Date : 2014.03.07 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC4503AQ8 BVDSS 30V -30VID 11A -9.5ARDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS

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