MTD120C10KJ4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTD120C10KJ4

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.2(8.9) A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7(11) nS

Cossⓘ - Capacitancia de salida: 43(126) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125(0.103) Ohm

Encapsulados: TO-252-4L

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MTD120C10KJ4 datasheet

 ..1. Size:398K  cystek
 mtd120c10kj4.pdf pdf_icon

MTD120C10KJ4

Spec. No. C945J4 Issued Date 2014.02.12 CYStech Electronics Corp. Revised Date 2014.06.13 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10KJ4 BVDSS 100V -100V ID @ VGS=10V(-10V) 2A -2.4A RDSON(typ.) @VGS=(-)10V 125 m 103 m RDSON(typ.) @VGS=(-)4.5V 132 m 117 m Features Low Gate Charge Simple Drive Requirement RoH

 4.1. Size:467K  cystek
 mtd120c10kq8.pdf pdf_icon

MTD120C10KJ4

Spec. No. C945Q8 Issued Date 2014.01.03 CYStech Electronics Corp. Revised Date 2015.03.10 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTD120C10KQ8 N-CH P-CH BVDSS 100V -100V ID @ TA=25 C, GS=10V(-10V) 2.4A -2.8A ID @ TC=25 C, GS=10V(-10V) 3.4A -3.9A RDSON(TYP.)@VGS=10V(-10V) 124m 102m Features Simple drive requirement RDSON(TYP.)@VG

 5.1. Size:400K  cystek
 mtd120c10j4.pdf pdf_icon

MTD120C10KJ4

Spec. No. C986J4 Issued Date 2014.12.05 CYStech Electronics Corp. Revised Date Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTD120C10J4 BVDSS 100V -100V ID@VGS=10V(-10V), TC=25 C 9.3A -12A ID@VGS=10V(-10V), TA=25 C 2.0A -2.5A Features 122m 91m RDSON(TYP)@VGS=10V(-10V) Low gate charge 132m 106m Simple drive require

 9.1. Size:276K  motorola
 mtd12n06e.pdf pdf_icon

MTD120C10KJ4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's Data Sheet MTD12N06EZL TMOS E-FET. High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode

MOSTRAR MÁS

Otros transistores... MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6, MTC8958Q8, MTD06N04Q8, IRF9540, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3