MTN10N65FP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN10N65FP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 182.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO-220FP

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MTN10N65FP datasheet

 ..1. Size:355K  cystek
 mtn10n65fp.pdf pdf_icon

MTN10N65FP

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FP ID 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

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 mtn10n65fpg.pdf pdf_icon

MTN10N65FP

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2011.08.15 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FPG ID 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

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 mtn10n65ea.pdf pdf_icon

MTN10N65FP

Spec. No. C725EA Issued Date 2010.02.25 CYStech Electronics Corp. Revised Date 2010.12.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 700V @Tj=150 RDS(ON) 0.85 MTN10N65EA ID 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

 7.1. Size:332K  cystek
 mtn10n60fp.pdf pdf_icon

MTN10N65FP

Spec. No. C406FP Issued Date 2008.12.02 CYStech Electronics Corp. Revised Date 2014.02.10 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDSON(MAX) 0.75 MTN10N60FP ID 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

MOSTRAR MÁS

Otros transistores... MTN0410L3, MTN04N03F3, MTN1012C3, MTN1012ZC3, MTN10N40E3, MTN10N60E3, MTN10N60FP, MTN10N65EA, IRF3710, MTN10N65FPG, MTN10N70EA, MTN12N60E3, MTN12N60FP, MTN12N65FP, MTN1308E3, MTN1322S3, MTN138KS3