MTN2300N3 Todos los transistores

Spec. No. C413N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2015.11.12 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2300N3 ID @VGS=4.5V, TA=25 C 6.3A 23m (typ.) RDSON@VGS=4.5V, ID=6A 30m (typ.) RDSON@VGS=2.5V, ID=5.2A 64m (typ.) RDSON@VGS=1.5V, ID=500mA Features Low on-resistance Capable of 2.5V gate dr

Spec. No. C323N3 Issued Date 2015.01.06 CYStech Electronics Corp. Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20V MTN2300AN3 ID@VGS=4.5V, TA=25 C 3.6A 29m (typ.) RDSON@VGS=4.5V, ID=3.6A 39m (typ.) RDSON@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-fr

Spec. No. C323N3 Issued Date 2004.04.05 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2302N3 ID 3.6A 29m (typ.) RDSON(MAX)@VGS=4.5V, ID=3.6A 39m (typ.) RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le

Spec. No. C737N3 Issued Date 2011.11.24 CYStech Electronics Corp. Revised Date 2012.02.10 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2304N3 ID 5A 20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN

Spec. No. C429N3 Issued Date 2008.08.14 CYStech Electronics Corp. Revised Date 2012.03.29 Page No. 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2306AN3 ID 5.5A 25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities

Spec. No. C582N3 Issued Date 2011.08.30 CYStech Electronics Corp. Revised Date Page No. 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20V MTN2306ZN3 ID 6A 28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DS VGS=2.5V, ID=2.6A @V =4.5V, I =5A R =30m GS D DS(ON) 60m VGS=1.8V, ID=1A @V =2.5V, I =2.6

Spec. No. C323V3 Issued Date 2009.01.19 CYStech Electronics Corp. Revised Date 2010.06.18 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive

Spec. No. C737M3 Issued Date 2012.07.26 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2304M3 ID 6A 20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-fre

Spec. No. C414M3 Issued Date 2012.03.29 CYStech Electronics Corp. Revised Date 2014.07.01 Page No. 1/8 N-CHANNEL MOSFET BVDSS 30V ID 6.8A RDSON@VGS=10V, ID=5.8A 25m (typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m (typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h

Spec. No. C723N3 Issued Date 2012.04.12 CYStech Electronics Corp. Revised Date Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30V ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT