MTN2302N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN2302N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 4.4 nC
   trⓘ - Tiempo de subida: 7.4 nS
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET MTN2302N3

MTN2302N3 Datasheet (PDF)

..1. Size:275K cystek
mtn2302n3.pdf

Spec. No. : C323N3 Issued Date : 2004.04.05 CYStech Electronics Corp.Revised Date :2012.06.26 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2302N3 ID 3.6A29m(typ.)RDSON(MAX)@VGS=4.5V, ID=3.6A 39m(typ.)RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le

7.1. Size:386K cystek
mtn2302v3.pdf

Spec. No. : C323V3 Issued Date : 2009.01.19 CYStech Electronics Corp.Revised Date : 2010.06.18 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive

8.1. Size:307K cystek
mtn2304n3.pdf

Spec. No. : C737N3 Issued Date : 2011.11.24 CYStech Electronics Corp.Revised Date : 2012.02.10 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304N3 ID 5A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN

8.2. Size:310K cystek
mtn2306an3.pdf

Spec. No. : C429N3 Issued Date : 2008.08.14 CYStech Electronics Corp.Revised Date :2012.03.29 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2306AN3 ID 5.5A25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities

8.3. Size:283K cystek
mtn2306zn3.pdf

Spec. No. : C582N3 Issued Date : 2011.08.30 CYStech Electronics Corp.Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20VMTN2306ZN3 ID 6A28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DSVGS=2.5V, ID=2.6A@V =4.5V, I =5A R =30m GS DDS(ON)60m VGS=1.8V, ID=1A @V =2.5V, I =2.6

8.4. Size:283K cystek
mtn2304m3.pdf

Spec. No. : C737M3 Issued Date : 2012.07.26 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304M3 ID 6A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-fre

8.5. Size:361K cystek
mtn2300n3.pdf

Spec. No. : C413N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2015.11.12 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2300N3 ID @VGS=4.5V, TA=25C 6.3A 23m(typ.) RDSON@VGS=4.5V, ID=6A 30m(typ.) RDSON@VGS=2.5V, ID=5.2A 64m(typ.) RDSON@VGS=1.5V, ID=500mA Features Low on-resistance Capable of 2.5V gate dr

8.6. Size:299K cystek
mtn2306am3.pdf

Spec. No. : C414M3 Issued Date : 2012.03.29 CYStech Electronics Corp.Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 30VID 6.8ARDSON@VGS=10V, ID=5.8A 25m(typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m(typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h

8.7. Size:308K cystek
mtn2306n3.pdf

Spec. No. : C723N3 Issued Date : 2012.04.12 CYStech Electronics Corp.Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30VID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT

8.8. Size:330K cystek
mtn2300an3.pdf

Spec. No. : C323N3 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20VMTN2300AN3 ID@VGS=4.5V, TA=25C 3.6A 29m(typ.) RDSON@VGS=4.5V, ID=3.6A 39m(typ.) RDSON@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-fr

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