MTN2328N3 Todos los transistores

 ..1. Size:341K  cystek
 mtn2328n3.pdf

Spec. No. C583N3 Issued Date 2011.05.18 CYStech Electronics Corp. Revised Date 2013.11.22 Page No. 1/ 8 100V N-Channel Enhancement Mode MOSFET BVDSS 100V MTN2328N3 ID 1.9A 125m RDSON(TYP) Features V =100V DS @V =10V, I =1.5A R =125m GS D DS(ON)(typ) Low on-resistance Low gate charge Excellent thermal and electrical capabilities

 7.1. Size:286K  cystek
 mtn2328m3.pdf

Spec. No. C583M3 Issued Date 2012.01.12 CYStech Electronics Corp. Revised Date 2013.08.11 Page No. 1/8 N-CHANNEL MOSFET BVDSS 100V ID 3A RDSON@VGS=10V, ID=3A 130m (typ) MTN2328M3 RDSON@VGS=4.5V, ID=3A 136m (typ) Description The MTN2328M3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive

 9.1. Size:275K  cystek
 mtn2302n3.pdf

Spec. No. C323N3 Issued Date 2004.04.05 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2302N3 ID 3.6A 29m (typ.) RDSON(MAX)@VGS=4.5V, ID=3.6A 39m (typ.) RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le

 9.2. Size:324K  cystek
 mtn2310v8.pdf

Spec. No. C393V8 Issued Date 2013.06.13 CYStech Electronics Corp. Revised Date 2013.06.24 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTN2310V8 ID 14A 31m VGS=10V, ID=3A RDSON(TYP) 35m VGS=4.5V, ID=2A Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

 9.3. Size:307K  cystek
 mtn2304n3.pdf

Spec. No. C737N3 Issued Date 2011.11.24 CYStech Electronics Corp. Revised Date 2012.02.10 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2304N3 ID 5A 20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN

 9.4. Size:310K  cystek
 mtn2306an3.pdf

Spec. No. C429N3 Issued Date 2008.08.14 CYStech Electronics Corp. Revised Date 2012.03.29 Page No. 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2306AN3 ID 5.5A 25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities

 9.5. Size:283K  cystek
 mtn2306zn3.pdf

Spec. No. C582N3 Issued Date 2011.08.30 CYStech Electronics Corp. Revised Date Page No. 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20V MTN2306ZN3 ID 6A 28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DS VGS=2.5V, ID=2.6A @V =4.5V, I =5A R =30m GS D DS(ON) 60m VGS=1.8V, ID=1A @V =2.5V, I =2.6

 9.6. Size:386K  cystek
 mtn2302v3.pdf

Spec. No. C323V3 Issued Date 2009.01.19 CYStech Electronics Corp. Revised Date 2010.06.18 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive

 9.7. Size:283K  cystek
 mtn2304m3.pdf

Spec. No. C737M3 Issued Date 2012.07.26 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2304M3 ID 6A 20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-fre

 9.8. Size:338K  cystek
 mtn2310m3.pdf

Spec. No. C393M3 Issued Date 2007.05.28 CYStech Electronics Corp. Revised Date 2015.09.02 Page No. 1/9 60V N-Channel Enhancement Mode MOSFET BVDSS 60V MTN2310M3 ID@VGS=10V, TA=25 C 4.8A RDSON@VGS=10V, ID=4A 41m (typ) RDSON@VGS=5V, ID=3A 46m (typ) Features Simple drive requirement Small package outline Pb-free lead plating package Symbol Outline

 9.9. Size:361K  cystek
 mtn2300n3.pdf

Spec. No. C413N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2015.11.12 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2300N3 ID @VGS=4.5V, TA=25 C 6.3A 23m (typ.) RDSON@VGS=4.5V, ID=6A 30m (typ.) RDSON@VGS=2.5V, ID=5.2A 64m (typ.) RDSON@VGS=1.5V, ID=500mA Features Low on-resistance Capable of 2.5V gate dr

 9.10. Size:311K  cystek
 mtn2310n3.pdf

Spec. No. C393N3 CYStech Electronics Corp. Issued Date 2007.11.26 Revised Date 2013.12.30 Page No. 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60V MTN2310N3 ID 4A RDSON@VGS=10V, ID=4A 41m (typ) RDSON@VGS=5V, ID=3A 46m (typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MT

 9.11. Size:299K  cystek
 mtn2306am3.pdf

Spec. No. C414M3 Issued Date 2012.03.29 CYStech Electronics Corp. Revised Date 2014.07.01 Page No. 1/8 N-CHANNEL MOSFET BVDSS 30V ID 6.8A RDSON@VGS=10V, ID=5.8A 25m (typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m (typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h

 9.12. Size:308K  cystek
 mtn2306n3.pdf

Spec. No. C723N3 Issued Date 2012.04.12 CYStech Electronics Corp. Revised Date Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30V ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT

 9.13. Size:330K  cystek
 mtn2300an3.pdf

Spec. No. C323N3 Issued Date 2015.01.06 CYStech Electronics Corp. Revised Date Page No. 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20V MTN2300AN3 ID@VGS=4.5V, TA=25 C 3.6A 29m (typ.) RDSON@VGS=4.5V, ID=3.6A 39m (typ.) RDSON@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-fr

 9.14. Size:325K  cystek
 mtn2342n3.pdf

Spec. No. C710N3 Issued Date 2013.12.18 CYStech Electronics Corp. Revised Date Page No. 1/ 9 16V N-Channel Enhancement Mode MOSFET BVDSS 16V MTN2342N3 ID @VGS=4.5V 6A VGS=4.5V, ID=7.2A 15.4m VGS=2.5V, ID=6.7A 17.2m VGS=1.8V, ID=6.4A RDSON(TYP) 19.8m VGS=1.5V, ID=5.5A 22.5m Features VGS=1.2V, ID=1.3A 26.7m Low on-resistance Low voltage ga

 9.15. Size:1231K  jiejie micro
 jmtn2310a.pdf

60V, 3A, 95.6m N-channel Power Trench MOSFET JMTN2310A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 3 A Pb-free plating RDS(ON)_Typ(@VGS=10V 85.0 mW RDS(ON)_Typ(@VGS=4.5V 95.6 mW Applications Load Switch P