FSL110D Todos los transistores

 

FSL110D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FSL110D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO205AF
     - Selección de transistores por parámetros

 

FSL110D Datasheet (PDF)

 8.1. Size:66K  intersil
 fsl110.pdf pdf_icon

FSL110D

FSL110D, FSL110RData Sheet October 1998 File Number 4224.33.5A, 100V, 0.600 Ohm, Rad Hard, SEGR FeaturesResistant, N-Channel Power MOSFETs 3.5A, 100V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military s

 9.1. Size:107K  international rectifier
 irfsl11n50a.pdf pdf_icon

FSL110D

PD- 91847AIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance

 9.2. Size:827K  international rectifier
 irfsl11n50apbf.pdf pdf_icon

FSL110D

PD- 95231IRFSL11N50APbF Lead-Free04/29/04Document Number: 91288 www.vishay.com1IRFSL11N50APbFDocument Number: 91288 www.vishay.com2IRFSL11N50APbFDocument Number: 91288 www.vishay.com3IRFSL11N50APbFDocument Number: 91288 www.vishay.com4IRFSL11N50APbFDocument Number: 91288 www.vishay.com5IRFSL11N50APbFDocument Number: 91288 www.vishay.com6IRFSL11

 9.3. Size:111K  international rectifier
 irfsl11n50.pdf pdf_icon

FSL110D

PD- 91847BIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFET Power MOSFETs from International Rectifierprovide the designer with the best combination of fast switching, ruggedizeddevice design, low

MOSTRAR MÁS

Otros transistores... FSJ260D , FSJ260R , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , AON6414A , FSL110R , FSL130D , FSL130R , FSL13AOD , FSL13AOR , FSL230D , FSL230R , FSL234D .

History: TA75333 | FDS8333C | STP45NE06FP | FSJ9260D | SML120B8 | RTL035N03FRA

 

 
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