FSL110D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FSL110D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO205AF

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FSL110D datasheet

 8.1. Size:66K  intersil
 fsl110.pdf pdf_icon

FSL110D

FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Features Resistant, N-Channel Power MOSFETs 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil has developed a Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military s

 9.1. Size:107K  international rectifier
 irfsl11n50a.pdf pdf_icon

FSL110D

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance

 9.2. Size:827K  international rectifier
 irfsl11n50apbf.pdf pdf_icon

FSL110D

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number 91288 www.vishay.com 1 IRFSL11N50APbF Document Number 91288 www.vishay.com 2 IRFSL11N50APbF Document Number 91288 www.vishay.com 3 IRFSL11N50APbF Document Number 91288 www.vishay.com 4 IRFSL11N50APbF Document Number 91288 www.vishay.com 5 IRFSL11N50APbF Document Number 91288 www.vishay.com 6 IRFSL11

 9.3. Size:111K  international rectifier
 irfsl11n50.pdf pdf_icon

FSL110D

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low

MOSTRAR MÁS

Otros transistores... FSJ260D, FSJ260R, FSJ264D, FSJ264R, FSJ9160D, FSJ9160R, FSJ9260D, FSJ9260R, AO3400, FSL110R, FSL130D, FSL130R, FSL13AOD, FSL13AOR, FSL230D, FSL230R, FSL234D