MTN2N65J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN2N65J3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.2 Ohm
   Paquete / Cubierta: TO-252

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MTN2N65J3 Datasheet (PDF)

..1. Size:333K cystek
mtn2n65j3.pdf

Spec. No. : C722J3 Issued Date : 2010.08.06 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65J3 ID : 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

7.1. Size:336K cystek
mtn2n65i3.pdf

Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65I3 ID : 1.8A Description The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

7.2. Size:273K cystek
mtn2n65fp.pdf

Spec. No. : C722FP Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date :2012.11.08 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 5.8 (typ.) MTN2N65FP ID : 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

7.3. Size:337K cystek
mtn2n65ai3.pdf

Spec. No. : C799I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ.) : 5.0 MTN2N65AI3 ID : 2A Description The MTN2N65AI3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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