MTN3400N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN3400N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.4 nS

Cossⓘ - Capacitancia de salida: 57 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de MTN3400N3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTN3400N3 datasheet

 ..1. Size:426K  cystek
 mtn3400n3.pdf pdf_icon

MTN3400N3

Spec. No. C414N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2017.05.03 Page No. 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3400N3 ID@VGS=10V, TA=25 C 5.8A 20m VGS=10V, ID=5.8A 22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical

 9.1. Size:280K  cystek
 mtn3418cn3.pdf pdf_icon

MTN3400N3

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

 9.2. Size:330K  cystek
 mtn3410j3.pdf pdf_icon

MTN3400N3

Spec. No. C433J3 Issued Date 2008.12.24 CYStech Electronics Corp. Revised Date 2010.07.22 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

 9.3. Size:277K  cystek
 mtn3484j3.pdf pdf_icon

MTN3400N3

Spec. No. C581J3 Issued Date 2011.09.29 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3484J3 ID 16A 125m VGS=10V, ID=8A RDSON(MAX) 140m VGS=4.5V, ID=8A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equival

MOSTRAR MÁS

Otros transistores... MTN3023J3, MTN303KN3, MTN3055J3, MTN3055L3, MTN3055M3, MTN3205E3, MTN3207E3, MTN3207F3, IRF9640, MTN3410F3, MTN3410J3, MTN3418BN3, MTN3418CN3, MTN3418N3, MTN3418S3, MTN3434G6, MTN3440N6