MTN3410F3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN3410F3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 59 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 338 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-263

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MTN3410F3 Datasheet (PDF)

..1. Size:289K cystek
mtn3410f3.pdf

Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 100V RDS(ON) : 20m (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

7.1. Size:330K cystek
mtn3410j3.pdf

Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp.Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

8.1. Size:280K cystek
mtn3418cn3.pdf

Spec. No. : C570N3 Issued Date : 2012.02.03 CYStech Electronics Corp.Revised Date : 2012.07.30 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.4AMTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

8.2. Size:274K cystek
mtn3418s3.pdf

Spec. No. : C726S3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.9AMTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

8.3. Size:282K cystek
mtn3418bn3.pdf

Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.7AMTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac

8.4. Size:280K cystek
mtn3418n3.pdf

Spec. No. : C726N3 Issued Date : 2009.08.21 CYStech Electronics Corp.Revised Date : 2013.11.29 Page No. : 1/7 N-Channel MOSFET BVDSS 30VID 1.9AMTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

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