MTN3418N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN3418N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 54 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de MTN3418N3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTN3418N3 datasheet

 ..1. Size:280K  cystek
mtn3418n3.pdf pdf_icon

MTN3418N3

Spec. No. C726N3 Issued Date 2009.08.21 CYStech Electronics Corp. Revised Date 2013.11.29 Page No. 1/7 N-Channel MOSFET BVDSS 30V ID 1.9A MTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

 7.1. Size:280K  cystek
mtn3418cn3.pdf pdf_icon

MTN3418N3

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

 7.2. Size:274K  cystek
mtn3418s3.pdf pdf_icon

MTN3418N3

Spec. No. C726S3 Issued Date 2011.12.20 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.9A MTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

 7.3. Size:282K  cystek
mtn3418bn3.pdf pdf_icon

MTN3418N3

Spec. No. C580N3 Issued Date 2011.09.16 CYStech Electronics Corp. Revised Date Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.7A MTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac

Otros transistores... MTN3205E3, MTN3207E3, MTN3207F3, MTN3400N3, MTN3410F3, MTN3410J3, MTN3418BN3, MTN3418CN3, RU7088R, MTN3418S3, MTN3434G6, MTN3440N6, MTN3484J3, MTN3484V8, MTN351AN3, MTN35N03J3, MTN3607E3