MTN3484J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN3484J3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 61.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO-252

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MTN3484J3 datasheet

 ..1. Size:277K  cystek
 mtn3484j3.pdf pdf_icon

MTN3484J3

Spec. No. C581J3 Issued Date 2011.09.29 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3484J3 ID 16A 125m VGS=10V, ID=8A RDSON(MAX) 140m VGS=4.5V, ID=8A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equival

 7.1. Size:322K  cystek
 mtn3484v8.pdf pdf_icon

MTN3484J3

Spec. No. C581V8 Issued Date 2012.03.15 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3484V8 ID 3.5A VGS=10V, ID=3.5A 92m RDSON(TYP) VGS=4.5V, ID=3.5A 97m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outlin

 9.1. Size:426K  cystek
 mtn3400n3.pdf pdf_icon

MTN3484J3

Spec. No. C414N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2017.05.03 Page No. 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3400N3 ID@VGS=10V, TA=25 C 5.8A 20m VGS=10V, ID=5.8A 22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical

 9.2. Size:280K  cystek
 mtn3418cn3.pdf pdf_icon

MTN3484J3

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

MOSTRAR MÁS

Otros transistores... MTN3410F3, MTN3410J3, MTN3418BN3, MTN3418CN3, MTN3418N3, MTN3418S3, MTN3434G6, MTN3440N6, 60N06, MTN3484V8, MTN351AN3, MTN35N03J3, MTN3607E3, MTN3607F3, MTN3820F3, MTN3820J3, MTN3K01N3