MTN7002N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN7002N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de MTN7002N3 MOSFET
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MTN7002N3 datasheet
mtn7002n3.pdf
Spec. No. C325N3 Issued Date 2002.12.18 CYStech Electronics Corp. Revised Date 2007.12.12 Page No. 1/5 N-CHANNEL MOSFET MTN7002N3 Description The MTN7002N3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7002N3 SOT-23 D S G G Gate S Source D Drain Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-Source Voltage BVD
mtn7002zhs3.pdf
Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2014.01.28 Page No. 1/7 N-Channel Enhancement Mode MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance Low-voltage drive(4V) High ESD Easily designed drive circuits High speed switching Easy to use in
mtn7002s3.pdf
Spec. No. C325S3 Issued Date 2005.06.15 CYStech Electronics Corp. Revised Date Page No. 1/4 N-CHANNEL MOSFET MTN7002S3 Description The MTN7002S3 is a N-channel enhancement-mode MOSFET. Pb-free package Symbol Outline MTN7002S3 SOT-323 D S G G Gate S Source D Drain Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-Sour
Otros transistores... MTN6515H8, MTN6515J3, MTN6680Q8, MTN6N65FP, MTN6N70FP, MTN7000A3, MTN7000ZA3, MTN7000ZHA3, AON6380, MTN7002S3, MTN7002ZAS3, MTN7002ZHN3, MTN7002ZHS3, MTN7002ZN3, MTN7002ZS3, MTN7451J3, MTN7451Q8
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