MTN7002ZS3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN7002ZS3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
   Paquete / Cubierta: SOT-323

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MTN7002ZS3 Datasheet (PDF)

..1. Size:258K cystek
mtn7002zs3.pdf

Spec. No. : C403S3 Issued Date : 2007.10.17 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZS3 Description The MTN7002ZS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(3V) Easily designed drive circuits Easy to use in parallel

6.1. Size:275K cystek
mtn7002zhs3.pdf

Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2014.01.28 Page No. : 1/7 N-Channel Enhancement Mode MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance Low-voltage drive(4V) High ESD Easily designed drive circuits High speed switching Easy to use in

6.2. Size:274K cystek
mtn7002zhn3.pdf

Spec. No. : C320N3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date :2013.12.17 Page No. : 1/7 N-Channel Logic Level Enhancement Mode MOSFET MTN7002ZHN3 Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free packa

6.3. Size:267K cystek
mtn7002zas3.pdf

Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZAS3 Description The MTN7002ZAS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel

6.4. Size:358K cystek
mtn7002zn3.pdf

Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp.Revised Date :2014.04.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZN3 Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Symbol Outline M

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