MTN7002ZS3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN7002ZS3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 14 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
Encapsulados: SOT-323
Búsqueda de reemplazo de MTN7002ZS3 MOSFET
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MTN7002ZS3 datasheet
mtn7002zhs3.pdf
Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2014.01.28 Page No. 1/7 N-Channel Enhancement Mode MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance Low-voltage drive(4V) High ESD Easily designed drive circuits High speed switching Easy to use in
mtn7002zhn3.pdf
Spec. No. C320N3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2013.12.17 Page No. 1/7 N-Channel Logic Level Enhancement Mode MOSFET MTN7002ZHN3 Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free packa
mtn7002zas3.pdf
Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 N-CHANNEL MOSFET MTN7002ZAS3 Description The MTN7002ZAS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel
Otros transistores... MTN7000ZA3, MTN7000ZHA3, MTN7002N3, MTN7002S3, MTN7002ZAS3, MTN7002ZHN3, MTN7002ZHS3, MTN7002ZN3, IRFP450, MTN7451J3, MTN7451Q8, MTN7478Q8, MTN7N60E3, MTN7N60FP, MTN7N65FP, MTN8N50E3, MTN8N50FP
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