MTN7N60E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN7N60E3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 114 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.08 Ohm
Paquete / Cubierta: TO-220AB
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MTN7N60E3 Datasheet (PDF)
mtn7n60e3.pdf
Spec. No. : C409E3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 1.08(typ.) MTN7N60E3 ID : 7A Description The MTN7N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
mtn7n60fp.pdf
Spec. No. : C409FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 1.08(typ.) MTN7N60FP ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn7n65fp.pdf
Spec. No. : C436FP Issued Date : 2009.01.22 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2 MTN7N65FP ID : 7A Description The MTN7N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
Otros transistores... MTN7002ZAS3 , MTN7002ZHN3 , MTN7002ZHS3 , MTN7002ZN3 , MTN7002ZS3 , MTN7451J3 , MTN7451Q8 , MTN7478Q8 , 4N60 , MTN7N60FP , MTN7N65FP , MTN8N50E3 , MTN8N50FP , MTN8N60E3 , MTN8N60FP , MTN8N65E3 , MTN8N65EA .
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