MTN8N50E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C742E3 Issued Date : 2009.10.01 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.85(max) MTN8N50E3 ID : 8A Description The MTN8N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

Spec. No. : C720FP Issued Date : 2009.10.01 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.78 typ. MTN8N50FP ID : 8A Description The MTN8N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

Spec. No. : C409E3-A Issued Date : 2009.08.04 CYStech Electronics Corp.Revised Date :2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V @Tj=150 RDS(ON) : 1.2 (max.) MTN8N60E3 ID : 7.5A Description The MTN8N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device des

Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDS(ON) :1.2(typ.) MTN8N70FP ID : 7.5A Description The MTN8N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

Spec. No. : C409FP-A Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(TYP) : 1.08 MTN8N60FP ID : 7.5A Description The MTN8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

Spec. No. : C727EA Issued Date : 2010.12.22 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.1(typ.) MTN8N65EA ID : 7.5A Description The MTN8N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

Spec. No. : C727E3 Issued Date : 2010.08.09 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2(typ.) MTN8N65E3 ID : 7.5A Description The MTN8N65E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

Spec. No. : C727FI Issued Date : 2012.09.26 CYStech Electronics Corp.Revised Date : 2015.03.16 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS 650VMTN8N65FI ID @ VGS=10V, TC=25C 7.5A 1.2 RDSON(TYP) @ VGS=10V, ID=3.75A Description The MTN8N65FI is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r

Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.2(typ.) MTN8N65FP ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r