MTNK3N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTNK3N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 7.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: SOT-23

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MTNK3N3 Datasheet (PDF)

..1. Size:270K cystek
mtnk3n3.pdf

Spec. No. : C447N3 Issued Date : 2010.08.18 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/7 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3N3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free lead plating and halogen-free package Symbol Outline

9.1. Size:262K cystek
mtnk3s3.pdf

Spec. No. : C447S3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2010.06.18 Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3S3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTNK3S3 SOT-323 D SG G

9.2. Size:263K cystek
mtnk3w3.pdf

Spec. No. : C447W3 Issued Date : 2010.07.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3W3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTNK3W3 SOT-923 D SG GGate S

9.3. Size:296K cystek
mtnk3y3.pdf

Spec. No. : C447Y3 Issued Date : 2011.02.24 CYStech Electronics Corp.Revised Date : 2012.10.05 Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20VMTNK3Y3 ID 255mARDSON@VGS=4.5V, ID=255mA 1.7(typ.)RDSON@VGS=2.5V, ID=20mA 2.2(typ.)RDSON@VGS=1.8V, ID=20mA 3.5(typ.)Description Low voltage drive, 1.8V. RDSON@VGS=1.6V, ID=20mA 4.1(typ.) Easy to use in

9.4. Size:268K cystek
mtnk3c3.pdf

Spec. No. : C447C3 Issued Date : 2011.09.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3C3 RDSON 3 Description Low voltage drive, 1.8V. Easy to use in parallel. High speed switching. ESD protected device. Pb-free package. Symbol Outline MTNK3C3 SOT-523 D S G G

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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