MTP1013S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP1013S3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.54 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.6 V
   Qgⓘ - Carga de la puerta: 1.2 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.64 Ohm
   Paquete / Cubierta: SOT-323

Búsqueda de reemplazo de MOSFET MTP1013S3

MTP1013S3 Datasheet (PDF)

..1. Size:300K cystek
mtp1013s3.pdf

Spec. No. : C698S3 CYStech Electronics Corp. Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP1013S3 ID -540mARDSON@VGS=-4.5V, ID=-430mA 0.64(typ)RDSON@VGS=-4V, ID=-300mA 0.68(typ)RDSON@VGS=-2.5V, ID=-300mA 1.1(typ) RDSON@VGS=-1.8V, ID=-150mA 1.9(typ) Features Very low level gate drive r

7.1. Size:334K cystek
mtp1013c3.pdf

Spec. No. : C698C3 Issued Date : 2012.07.06 CYStech Electronics Corp.Revised Date : 2014.06.17 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP1013C3 ID -500mARDSON@VGS=-4.5V, ID=-500mA 0.63(typ)RDSON@VGS=-2.5V, ID=-300mA 1.1(typ) RDSON@VGS=-1.8V, ID=-150mA 1.7(typ) Features Very low level gate drive requirements allowing direct operation

9.1. Size:221K motorola
mtp10n10el.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10EL/DDesigner's Data SheetMTP10N10ELLogic Level TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high10 AMPERESenergy in the avalanche and commutation modes. This new energy

9.2. Size:887K motorola
mtm10n25 mtp10n25.pdf

9.3. Size:237K motorola
mtp10n10erev0x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10E/DDesigner's Data SheetMTP10N10ETMOS IVPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETsThis advanced E series of TMOS power MOSFETs is designed10 AMPERESto withstand high energy in the avalanche and commutation100 VOLTSmodes. These new energy efficient d

9.4. Size:249K motorola
mtp10n40erev0x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of

9.5. Size:203K motorola
mtp10n10e.pdf

9.6. Size:151K motorola
mtp10n40e.pdf

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irf120 irf121 irf122 irf123 mtp10n08.pdf

9.8. Size:170K fairchild semi
mtp10n10.pdf

9.9. Size:79K njs
mtp10n35 mtp10n40.pdf

9.10. Size:102K onsemi
mtp10n10el mtp10n10elg.pdf

MTP10N10ELPreferred DevicePower MOSFET10 A, 100 V, Logic Level, N-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,http://onsemi.comconverters and PWM mo

9.11. Size:108K onsemi
mtp10n10e.pdf

MTP10N10EPreferred DevicePower MOSFET10 Amps, 100 VoltsNChannel TO220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers draintosource diodes with fast recovery times. Designed forlow voltage, high speed switching applications in power supplies,10 AMPERESconverters

9.12. Size:580K cystek
mtp1067c6.pdf

Spec. No. : C962C6 Issued Date : 2014.07.31 CYStech Electronics Corp. Revised Date : Page No. : 1/ 8 P-Channel Enhancement Mode MOSFET MTP1067C6 BVDSS -20V ID -1.06A VGS=-4.5V, ID=-1.06A 0.112 Features VGS=-2.5V, ID=-1.0A 0.149 RDSON(TYP) High speed switching VGS=-1.8V, ID=-0.49A 0.206 Low-voltage drive(-1.8V) Easily designed drive circuits

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