MTP1067C6 Todos los transistores

 ..1. Size:580K  cystek
 mtp1067c6.pdf

 9.1. Size:221K  motorola
 mtp10n10el.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10EL/D Designer's Data Sheet MTP10N10EL Logic Level TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 10 AMPERES energy in the avalanche and commutation modes. This new energy

 9.2. Size:887K  motorola
 mtm10n25 mtp10n25.pdf

 9.3. Size:237K  motorola
 mtp10n10erev0x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d

 9.4. Size:249K  motorola
 mtp10n40erev0x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also of

 9.5. Size:203K  motorola
 mtp10n10e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N10E/D Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FETs This advanced E series of TMOS power MOSFETs is designed 10 AMPERES to withstand high energy in the avalanche and commutation 100 VOLTS modes. These new energy efficient d

 9.6. Size:151K  motorola
 mtp10n40e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also of

 9.7. Size:170K  fairchild semi
 irf120 irf121 irf122 irf123 mtp10n08.pdf

 9.8. Size:170K  fairchild semi
 mtp10n10.pdf

 9.9. Size:79K  njs
 mtp10n35 mtp10n40.pdf

 9.10. Size:102K  onsemi
 mtp10n10el mtp10n10elg.pdf

MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, http //onsemi.com converters and PWM mo

 9.11. Size:108K  onsemi
 mtp10n10e.pdf

MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, 10 AMPERES converters

 9.12. Size:300K  cystek
 mtp1013s3.pdf

Spec. No. C698S3 CYStech Electronics Corp. Issued Date 2012.07.13 Revised Date 2013.09.09 Page No. 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP1013S3 ID -540mA RDSON@VGS=-4.5V, ID=-430mA 0.64 (typ) RDSON@VGS=-4V, ID=-300mA 0.68 (typ) RDSON@VGS=-2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-150mA 1.9 (typ) Features Very low level gate drive r

 9.13. Size:334K  cystek
 mtp1013c3.pdf

Spec. No. C698C3 Issued Date 2012.07.06 CYStech Electronics Corp. Revised Date 2014.06.17 Page No. 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP1013C3 ID -500mA RDSON@VGS=-4.5V, ID=-500mA 0.63 (typ) RDSON@VGS=-2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-150mA 1.7 (typ) Features Very low level gate drive requirements allowing direct operation