FSL430D Todos los transistores

 8.1. Size:55K  intersil
 fsl430.pdf

FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically Total Dose designed for commercial and military space applications. - Meets Pre-RAD Specifications to 100K RAD (Si) Enhance

 9.1. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 9.2. Size:376K  international rectifier
 irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 9.3. Size:353K  international rectifier
 irfs4321pbf irfsl4321pbf.pdf

PD - 97105C IRFS4321PbF IRFSL4321PbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits 85A c ID l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D Performance D D

 9.4. Size:712K  infineon
 auirfs4310 auirfsl4310.pdf

AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au

 9.5. Size:256K  inchange semiconductor
 irfsl4321.pdf

Isc N-Channel MOSFET Transistor IRFSL4321 FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15

 9.6. Size:286K  inchange semiconductor
 irfsl4310 .pdf

isc N-Channel MOSFET Transistor IRFSL4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 9.7. Size:255K  inchange semiconductor
 irfsl4310.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T