MTP405CJ3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C386J3 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2014.03.14 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP405CJ3 ID -34ARDS(ON)@VGS=-10V, ID=-18A 21m(typ)RDS(ON)@VGS=-4.5V, ID=-10A 33m(typ)Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat

Spec. No. : C386J3 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP405J3 ID -18ARDS(ON)@VGS=-10V, ID=-18A 21m(typ)RDS(ON)@VGS=-4.5V, ID=-10A 33m(typ)Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead platin

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP40N10E/DAdvance Data SheetMTP40N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high40 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP40N10E/DAdvance Data SheetMTP40N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high40 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain

Spec. No. : C563J3 Issued Date : 2012.01.16 CYStech Electronics Corp.Revised Date : 2012.10.11 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTP4060J3 ID -27A36m(typ.)RDSON@VGS=-10V, ID=-20A 41m(typ.)Features RDSON@VGS=-4.5V, ID=-18A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag