MTP4409H8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP4409H8  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 63 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 374 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm

Encapsulados: DFN5X6

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MTP4409H8 datasheet

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MTP4409H8

Spec. No. C808H8 Issued Date 2013.09.02 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP4409H8 ID -15A 7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

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MTP4409H8

Spec. No. C808Q8 Issued Date 2012.04.03 CYStech Electronics Corp. Revised Date 2014.05.16 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m (typ) RDSON@VGS=-4.5V, ID=-10A 11.4m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free

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MTP4409H8

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46m ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

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MTP4409H8

Spec. No. C791Q8 Issued Date 2010.07.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4403Q8 RDSON(MAX) 50m ID -6.1A Description The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... MTP3LP01S3, MTP3LP01Y3, MTP405CJ3, MTP405J3, MTP4060J3, MTP4151N3, MTP4403Q8, MTP4403SQ8, IRF9540N, MTP4409Q8, MTP4411AQ8, MTP4411M3, MTP4411Q8, MTP4413Q8, MTP4423Q8, MTP4435V8, MTP4463Q8