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MTP4435V8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP4435V8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 323 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0103 Ohm
   Paquete / Cubierta: DFN3X3
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MTP4435V8 Datasheet (PDF)

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 mtp4435v8.pdf pdf_icon

MTP4435V8

Spec. No. : C391V8 Issued Date : 2012.09.28 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4435V8 ID -40A10.3m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15m(typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

 7.1. Size:491K  cystek
 mtp4435aq8.pdf pdf_icon

MTP4435V8

Spec. No. : C107Q8 Issued Date : 2015.08.14 CYStech Electronics Corp. Revised Date : 2015.12.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP4435AQ8 ID@ VGS=-10V, TA=25C -12.3A 12.3m(typ.) RDSON @VGS=-10V, ID=-8A 17.5m(typ.) RDSON @VGS=-4.5V, ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed

 9.1. Size:621K  cystek
 mtp4403sq8.pdf pdf_icon

MTP4435V8

Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20VMTP4403SQ8 RDSON(MAX) 46m ID -6.1ADescription The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

 9.2. Size:287K  cystek
 mtp4411q8.pdf pdf_icon

MTP4435V8

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VMM85-02F | STF12N50U

 

 
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