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AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 5.8A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFET N-Channel MOSFET AO3404A (KO3404A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) 1 2 +0.1 +0.05 RDS(ON) 25m (VGS = 10V) 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 35m (VGS = 4.5V) 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rat

R UMW UMW AO3404A UMW AO3404A UMW AO3404A N-Channel Enhancement MOSFET SOT 23 Features VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V) RDS(ON) 43 m (VGS = 4.5V) 1. GATE 2. SOURCE MARKING 3. DRAIN D A49T G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Ta=25 5.8 Continuou

SMD Type MOSFET N-Channel MOSFET AO3404A (KO3404A) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) 1 2 RDS(ON) 25m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 35m (VGS = 4.5V) 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol

AO3404 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5A be used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3404 AO3404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 5.8A (VGS = 10V) device may be used as a load switch or in PWM RDS(ON)

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3404 (KO3404) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID =5.8 A (VGS=10V) 1 2 RDS(ON) 28 m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 D RDS(ON) 43 m (VGS = 4.5V) 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3404 (KO3404) 3 Features VDS (V) = 30V ID =5.8 A (VGS=10V) 12 RDS(ON) 28 m (VGS =10V) RDS(ON) 43 m (VGS =4.5V) D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3404 (KO3404) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V) 1 2 +0.1 +0.05 0.95 -0.1 D 0.1 -0.01 RDS(ON) 43 m (VGS = 4.5V) +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source G 3. Drain 3.collector S Absolute Maximum Ratings Ta = 25 Paramet

Plastic-Encapsulate Mosfets AO3404 FEATURES N-Channel MOSFET The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. D D 1.Gate 2.Source SOT-23 3.Drain G G S S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 3

AO3404 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3404 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1