AO3413 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3413

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 72 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.097 Ohm

Encapsulados: SOT23

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AO3413 datasheet

 ..1. Size:456K  aosemi
 ao3413.pdf pdf_icon

AO3413

AO3413 20V P-Channel MOSFET General Description Features General Description Features The AO3413 uses advanced trench technology to VDS = -20V The AO3413 uses advanced trench technology to VDS = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This

 ..2. Size:2128K  kexin
 ao3413.pdf pdf_icon

AO3413

SMD Type MOSFET P-Channel MOSFET AO3413 (KO3413) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-3 A (VGS =-4.5V) RDS(ON) 80m (VGS =-4.5V) 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 RDS(ON) 100m (VGS =-2.5V) +0.1 1.9-0.1 RDS(ON) 130m (VGS =-1.8V) 1. Gate D D 2. Source 3. Drain G G S S Absolute Maxim

 ..3. Size:747K  cn shikues
 ao3413.pdf pdf_icon

AO3413

AO3413 P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A, R = 120m (MAX) @V = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R 3 Reliable and Rugged SC-59 for Surface Mount Package SC-59 1 2 Applications 1 Gate 2 Source 3 Drain Power Management Portable Equipment and Battery Powered Sy

 0.1. Size:192K  1
 ao3413l.pdf pdf_icon

AO3413

AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3413/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

MOSTRAR MÁS

Otros transistores... AO3400A, AO3402, AO3403, AO3404, AO3404A, AO3406, AO3407A, AO3409, 8N60, AO3414, AO3415, AO3415A, AO3416, AO3418, AO3419, AO3420, AO3421