AO3415 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO3415
   Código: AF9TF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 9.3 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET AO3415

AO3415 Datasheet (PDF)

..1. Size:283K aosemi
ao3415.pdf

AO341520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

..2. Size:1085K shenzhen
ao3415.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3415Rev 3: May 2004AO3415P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3415 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -4 Aoperation with gate voltages as low as 1.8V. This RDS(ON)

..3. Size:1982K kexin
ao3415.pdf

SMD Type MOSFETP-Channel MOSFETAO3415 (KO3415)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01+0.11.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. SourceD3. Drain

..4. Size:1998K kexin
ao3415 ko3415.pdf

SMD Type MOSFETP-Channel MOSFETAO3415 (KO3415)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2 RDS(ON) 55m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. GateD2. Source3

..5. Size:372K guangdong hottech
ao3415.pdf

Plastic-Encapsulate MosfetsAO3415FEATURESP-Channel MOSFETThe AO3415 uses advanced trench technologyto provide excellent RDS(ON), low gate chargeand operation with gate voltages as low as 1.8V.This device is suitable for use as a load switchapplications.D1.Gate2.SourceSOT-233.DrainGSAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Maxim

..6. Size:1018K huashuo
ao3415.pdf

AO3415 P-Ch 20V Fast Switching MOSFETs Description Product Summary The AO3415 is the high cell density trenched P-ch VDS -20 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The AO3415 meet the RoHS and Green Product requirement with full function reliability approved. Super L

..7. Size:1668K mdd
ao3415.pdf

AO3415 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 37m@ -4.5V 1. GATE -4.8A -20V 2. SOURCE 43m@ -3.3V 1 3. DRAIN 2 APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent circuit D 3415 G S PACKAGE SPECIFICATIONS Reel DI

..8. Size:607K cn puolop
ao3415.pdf

AO3415 -20V P-Channel Enhancement Mode MOSFETGeneral Features Description VDS = -20V,ID =-4A The AO3415 uses advanced trench technology to provide RDS(ON)

0.1. Size:319K aosemi
ao3415a.pdf

AO3415A20V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3415A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

0.2. Size:1729K kexin
ao3415a.pdf

SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01+0.11.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. SourceD3. Dra

0.3. Size:1656K kexin
ao3415w.pdf

SMD Type MOSFETP-Channel MOSFET (KO3415W)AO3415W Features VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 60m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V)1 Gate2 Source3 Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -20V Gate-Source Voltage VGS8 Conti

0.4. Size:1662K kexin
ao3415as.pdf

SMD Type MOSFETP-Channel MOSFETAO3415AS (KO3415AS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features 3 VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1D RDS(ON) 54m (VGS =-2.5V)+0.11.9 -0.2 RDS(ON) 75m (VGS =-1.8V) ESD Rating: 3000V HBMG1. Gate2. Source3. Dra

0.5. Size:1998K kexin
ao3415-3.pdf

0.6. Size:1694K kexin
ao3415a-3.pdf

SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-5 A (VGS =-4.5V)1 2 RDS(ON) 43m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 55m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. Source

0.7. Size:459K umw-ic
ao3415a.pdf

RUMW UMW AO3415ASOT-23 Plastic-Encapsulate MOSFETSUMW AO3415A P-Channel 20-V(D-S) MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 50m@-4.5V-20V 60m@-2.5V-4A1. GATE 73m@-1.8V2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G AFHVS Maximum ratings

0.8. Size:298K msksemi
ao3415ai-ms.pdf

www.msksemi.comAO3415AI-MSSemiconductor CompianceDVDS -20VI (at V =-4.5V) -4AD GSR (at V = -4.5V)

0.9. Size:868K cn vbsemi
ao3415a.pdf

AO3415Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

0.10. Size:1556K cn tech public
ao3415a.pdf