AO3416
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO3416
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8
V
|Id|ⓘ - Corriente continua de drenaje: 6.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 328
nS
Cossⓘ - Capacitancia
de salida: 160
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022
Ohm
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de AO3416
MOSFET
-
Selección ⓘ de transistores por parámetros
AO3416
Datasheet (PDF)
..1. Size:411K aosemi
ao3416.pdf 
AO341620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO3416 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)
..2. Size:522K shenzhen
ao3416.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdAO3416N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3416 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6.0 Aoperation with gate voltages as low as 1.8V. This RDS(ON)
..3. Size:2330K kexin
ao3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416)SOT-23-3Unit: mm+0.2 Features 2.9 -0.1+0.10.4-0.1 VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)1 2D D+0.02+0.1 RDS(ON) 34m (VGS = 1.8V) 0.15 -0.020.95 -0.1+0.11.9 -0.2GG1. Gate2. SourceSS3. Drain
..4. Size:234K kexin
ao3416 ko3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416) Features VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)12D D RDS(ON) 34m (VGS = 1.8V) GG SS Absolute Maximum Ratings Ta
..5. Size:204K cn puolop
ao3416.pdf
AO3416N-Channel Enhancement Mode Power MOSFET Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)
..6. Size:389K cn shikues
ao3416.pdf
AO3416N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 50m(MAX) @VGS = 4.5V. RDS(ON) = 55m(MAX) @VGS= 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged . SC-59 for Surface Mount Package . Applications LI-ION Protection Circuit Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteris
0.1. Size:2685K umw-ic
ao3416a.pdf
RUMWUMW AO3416AUMW AO3416AN-Channel MOSFET FeaturesSOT23 VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) RDS(ON) 34m (VGS = 1.8V)1. GATE MARKING 2. SOURCE DD 3. DRAIN AR6E GGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20
9.1. Size:110K 1
ao3419l.pdf
Rev 1:Nov 2004AO3419, AO3419L ( Green Product )P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3419 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -3.5 Aoperation with gate voltages as low as 2.5V. This RDS(ON)
9.2. Size:192K 1
ao3413l.pdf
AO3413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3413/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)
9.3. Size:283K aosemi
ao3415.pdf
AO341520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)
9.4. Size:319K aosemi
ao3415a.pdf
AO3415A20V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3415A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)
9.5. Size:456K aosemi
ao3413.pdf
AO341320V P-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3413 uses advanced trench technology to VDS = -20VThe AO3413 uses advanced trench technology to VDS = -20Vprovide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This
9.6. Size:425K aosemi
ao3414.pdf
AO341420V N-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3414 uses advanced trench technology to VDS = 20VThe AO3414 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V)provide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This ope
9.7. Size:311K aosemi
ao3419.pdf
AO341920V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3419 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)
9.8. Size:449K aosemi
ao3418.pdf
AO341830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3418 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 3.8Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)
9.9. Size:1085K shenzhen
ao3415.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3415Rev 3: May 2004AO3415P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3415 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -4 Aoperation with gate voltages as low as 1.8V. This RDS(ON)
9.10. Size:294K shenzhen
ao3410.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3410AO3410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 5.0 Aoperation with gate voltages as low as 1.8V and as RDS(ON)
9.11. Size:515K shenzhen
ao3414.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3414AO3414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3414 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 4.2 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
9.12. Size:1982K kexin
ao3415.pdf
SMD Type MOSFETP-Channel MOSFETAO3415 (KO3415)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01+0.11.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. SourceD3. Drain
9.13. Size:1729K kexin
ao3415a.pdf
SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01+0.11.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. SourceD3. Dra
9.14. Size:2160K kexin
ao3418-3.pdf
SMD Type MOSFETN-Channel MOSFETAO3418 (KO3418)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 3.8 A (VGS = 10V)1 2 RDS(ON) 55m (VGS = 10V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1. Gate2. Source3. DrainDDG GSS Absolute
9.15. Size:2287K kexin
ao3413-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V)1 2 RDS(ON) 80m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.11.9-0.2 RDS(ON) 130m (VGS =-1.8V)1. Gate2. SourceDD3. DrainGGSS Absolute
9.16. Size:1656K kexin
ao3415w.pdf
SMD Type MOSFETP-Channel MOSFET (KO3415W)AO3415W Features VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 60m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V)1 Gate2 Source3 Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -20V Gate-Source Voltage VGS8 Conti
9.17. Size:2128K kexin
ao3413.pdf
SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-3 A (VGS =-4.5V) RDS(ON) 80m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 100m (VGS =-2.5V)+0.11.9-0.1 RDS(ON) 130m (VGS =-1.8V)1. GateDD2. Source3. DrainGGSS Absolute Maxim
9.18. Size:692K kexin
ao3410.pdf
SMD Type MOSFETN-Channel MOSFETAO3410 (KO3410)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2 RDS(ON) 28m (VGS = 10V)+0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) RDS(ON) 70m (VGS = 1.8V)1. Gate2. Source3. Drain
9.19. Size:1222K kexin
ao3414.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3414 (KO3414)SOT-23Unit: mm+0.12.9 -0.1+0.1Features 0.4 -0.13VDS (V) = 20VID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)1 2+0.1+0.05RDS(ON) 63m (VGS = 2.5V)0.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 87m (VGS = 1.8V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T
9.20. Size:1382K kexin
ao3419-3.pdf
SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3419 (KO3419)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3VDS (V) = -20VID = -3.5 ARDS(ON) 75m (VGS = -10V)1 2+0.02RDS(ON) 95m (VGS = -4.5V) +0.10.15 -0.020.95 -0.11.9+0.1-0.2DRDS(ON) 145m (VGS = -2.5V)1. Gate2. SourceG3. DrainSAbsolute Maximum Ratings Ta = 25Parameter Symbol R
9.21. Size:1998K kexin
ao3415 ko3415.pdf
SMD Type MOSFETP-Channel MOSFETAO3415 (KO3415)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2 RDS(ON) 55m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. GateD2. Source3
9.22. Size:1662K kexin
ao3415as.pdf
SMD Type MOSFETP-Channel MOSFETAO3415AS (KO3415AS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features 3 VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1D RDS(ON) 54m (VGS =-2.5V)+0.11.9 -0.2 RDS(ON) 75m (VGS =-1.8V) ESD Rating: 3000V HBMG1. Gate2. Source3. Dra
9.23. Size:1178K kexin
ao3414-3.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3414 (KO3414)SOT-23-3Unit: mm+0.22.9-0.1Features+0.10.4 -0.13VDS (V) = 20VID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)1 2RDS(ON) 63m (VGS = 2.5V)+0.02D +0.10.15 -0.020.95 -0.1RDS(ON) 87m (VGS = 1.8V)+0.11.9-0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Sym
9.24. Size:550K kexin
ao3410-3.pdf
SMD Type MOSFETN-Channel MOSFETAO3410 (KO3410)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.02+0.1 RDS(ON) 28m (VGS = 10V) 0.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)1. Gate RDS(ON) 70m (VGS = 1.8V)2. Source3. Dr
9.25. Size:1708K kexin
ao3419.pdf
SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3419 (KO3419)SOT-23Unit: mm+0.12.9 -0.1Features+0.10.4 -0.1VDS (V) = -20V3ID = -3.5 ARDS(ON) 75m (VGS = -10V)1 2RDS(ON) 95m (VGS = -4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 145m (VGS = -2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta =
9.26. Size:2149K kexin
ao3418.pdf
SMD Type MOSFETN-Channel MOSFETAO3418 (KO3418)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 VDS (V) = 30V ID = 3.8 A (VGS = 10V) RDS(ON) 55m (VGS = 10V)1 2+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 65m (VGS = 4.5V)+0.11.9 -0.1 RDS(ON) 85m (VGS = 2.5V)1. Gate2. SourceDD3. DrainG GSS Absolute Maxi
9.27. Size:1998K kexin
ao3415-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3415 (KO3415)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2 RDS(ON) 55m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. GateD2. Source3
9.28. Size:1694K kexin
ao3415a-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3415A (KO3415A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-5 A (VGS =-4.5V)1 2 RDS(ON) 43m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 55m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. Gate2. Source
9.29. Size:356K umw-ic
ao3413a.pdf
RUMWUMW AO3413A20V P-Channel MOSFETSOT23 General DescriptionGeneral DescriptionThe AO3413 uses advanced trench technology toThe AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 1.8V. Thisoperation with gate voltages as low as 1.8V. This device
9.30. Size:459K umw-ic
ao3415a.pdf
RUMW UMW AO3415ASOT-23 Plastic-Encapsulate MOSFETSUMW AO3415A P-Channel 20-V(D-S) MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 50m@-4.5V-20V 60m@-2.5V-4A1. GATE 73m@-1.8V2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G AFHVS Maximum ratings
9.31. Size:2314K umw-ic
ao3414a.pdf
RUMW UMW AO3414AUMW AO3414AN-Channel Enhancement MOSFETFeaturesVDS (V) = 20VSOT23 ID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)RDS(ON) 63m (VGS = 2.5V)RDS(ON) 87m (VGS = 1.8V)MARKING1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain TA=25 4.2ID
9.32. Size:372K guangdong hottech
ao3415.pdf
Plastic-Encapsulate MosfetsAO3415FEATURESP-Channel MOSFETThe AO3415 uses advanced trench technologyto provide excellent RDS(ON), low gate chargeand operation with gate voltages as low as 1.8V.This device is suitable for use as a load switchapplications.D1.Gate2.SourceSOT-233.DrainGSAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Maxim
9.33. Size:1018K huashuo
ao3415.pdf
AO3415 P-Ch 20V Fast Switching MOSFETs Description Product Summary The AO3415 is the high cell density trenched P-ch VDS -20 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The AO3415 meet the RoHS and Green Product requirement with full function reliability approved. Super L
9.34. Size:1668K mdd
ao3415.pdf
AO3415 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 37m@ -4.5V 1. GATE -4.8A -20V 2. SOURCE 43m@ -3.3V 1 3. DRAIN 2 APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent circuit D 3415 G S PACKAGE SPECIFICATIONS Reel DI
9.35. Size:298K msksemi
ao3415ai-ms.pdf
www.msksemi.comAO3415AI-MSSemiconductor CompianceDVDS -20VI (at V =-4.5V) -4AD GSR (at V = -4.5V)
9.36. Size:607K cn puolop
ao3415.pdf
AO3415 -20V P-Channel Enhancement Mode MOSFETGeneral Features Description VDS = -20V,ID =-4A The AO3415 uses advanced trench technology to provide RDS(ON)
9.37. Size:747K cn shikues
ao3413.pdf
AO3413P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -20V/-3A, R = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R3 Reliable and Rugged SC-59 for Surface Mount PackageSC-59 1 2 Applications1 Gate 2 Source 3 Drain Power Management Portable Equipment and Battery Powered Sy
9.38. Size:168K cn shikues
ao3414.pdf
Plastic-Encapsulate MOSFET(NEncapsulate MOSFET(N-Channel) FEATURES High Power and current handing capabilityHigh Power and current handing capability Lead free product is acquired Surface Mout Package SC-59 SC-59 1Gate 2 3Drain Gate 2Source MAXIMUM RATINGS (TA=25 unless otherwise noted)unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25unless
9.39. Size:868K cn vbsemi
ao3415a.pdf
AO3415Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
9.40. Size:879K cn vbsemi
ao3414.pdf
AO3414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert
Otros transistores... AO3404A
, AO3406
, AO3407A
, AO3409
, AO3413
, AO3414
, AO3415
, AO3415A
, IRF730
, AO3418
, AO3419
, AO3420
, AO3421
, AO3421E
, AO3422
, AO3423
, AO3424
.
History: BSO200P03S
| NP82N055NHE
| TT8K11
| 2SK2596
