AO3434 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO343430V N-Channel MOSFETGeneral Description Product SummaryThe AO3434 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 4.2A (VGS = 10V)device is suitable for use as a load switch or in RDS(ON)

SMD Type MOSFETN-Channel MOSFETAO3434 (KO3434)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 4.2 A (VGS = 10V)1 2 RDS(ON) 52m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 75m (VGS = 4.5V) ESD Protected1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25P

AO3434A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3434A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO3434A (KO3434A)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON) 52m (VGS = 10V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 60m (VGS = 4.5V)+0.11.9 -0.2 RDS(ON) 78m (VGS = 2.5V)1. Gate2. SourceD 3. DrainGS Absolute Maximum Rati

SMD Type MOSFETN-Channel MOSFETAO3434A (KO3434A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 4 A (VGS = 10V)1 2 RDS(ON) 52m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 60m (VGS = 4.5V) RDS(ON) 78m (VGS = 2.5V)1. Gate2. Source3. DrainD GS Absolute Maximum Rati

SMD Type MOSFETN-Channel MOSFETAO3434 (KO3434)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 4.2 A (VGS = 10V)1 2 RDS(ON) 52m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 75m (VGS = 4.5V) ESD Protected1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25