AO3438 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO3438
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 48 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.051 Ohm
Encapsulados: SOT23
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AO3438 datasheet
ao3438.pdf
AO3438 20V N-Channel MOSFET General Description Product Summary The AO3438 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)
ao3438.pdf
SMD Type MOSFET N-Channel MOSFET AO3438 (KO3438) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 3 A (VGS = 4.5V) 1 2 RDS(ON) 62m (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 70m (VGS = 2.5V) 1.9-0.1 RDS(ON) 85m (VGS = 1.8V) 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings
ao3438-3.pdf
SMD Type MOSFET N-Channel MOSFET AO3438 (KO3438) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 3 A (VGS = 4.5V) 1 2 RDS(ON) 62m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 RDS(ON) 70m (VGS = 2.5V) 1.9-0.2 RDS(ON) 85m (VGS = 1.8V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Rat
ao3435.pdf
AO3435 20V P-Channel MOSFET General Description Product Summary The AO3435 uses advanced trench technology to VDS = -20V provide excellent RDS(ON), low gate charge and ID = -3.5A (VGS = -4.5V) operation with gate voltages as low as 1.5V. This RDS(ON)
Otros transistores... AO3421, AO3421E, AO3422, AO3423, AO3424, AO3434, AO3434A, AO3435, EMB04N03H, AO3442, AO3460, AO4202, AO4240, AO4260, AO4264, AO4266, AO4286
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