AO3442 Todos los transistores

 ..1. Size:494K  aosemi
 ao3442.pdf

AO3442 100V N-Channel MOSFET General Description Product Summary VDS 100V The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 1A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 ..2. Size:2134K  kexin
 ao3442.pdf

SMD Type MOSFET N-Channel MOSFET AO3442 (KO3442) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 1 A (VGS = 10V) 1 2 RDS(ON) 630m (VGS = 10V) +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 RDS(ON) 720m (VGS = 4.5V) D D 1. Gate 2. Source 3. Drain G G S S Absolute Maximum Ratings Ta = 25 Parameter Symb

 ..3. Size:902K  cn vbsemi
 ao3442.pdf

AO3442 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlighting

 0.1. Size:2281K  kexin
 ao3442-3.pdf

SMD Type MOSFET N-Channel MOSFET AO3442 (KO3442) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 1 A (VGS = 10V) 1 2 RDS(ON) 630m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 720m (VGS = 4.5V) +0.1 1.9-0.2 D D 1. Gate 2. Source 3. Drain G G S S Absolute Maximum Ratings Ta = 25 Parameter

 0.2. Size:384K  umw-ic
 ao3442a.pdf

R UMW UMW AO3442A 100V N-Channel MOSFET General Description The AO3442 combines advanced trench MOSFET SOT 23 technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS 100V ID (at VGS=10V) 1A 1. GATE