AO4404B
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO4404B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 8.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5
nS
Cossⓘ - Capacitancia
de salida: 75
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024
Ohm
Paquete / Cubierta:
SO-8
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AO4404B
Datasheet (PDF)
..1. Size:561K aosemi
ao4404b.pdf 
AO4404B30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4404B uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 8.5Awith gate voltages as low as 2.5V. This device makes an RDS(ON) (at VGS=10V)
..2. Size:2214K kexin
ao4404b.pdf
SMD Type MOSFETN-Channel MOSFETAO4404B (KO4404B)SOP-8 Features VDS (V) = 30V ID = 8.5 A (VGS = 10V)1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V)1 Source 5 Drain RDS(ON) 48m (VGS = 2.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDDG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
8.1. Size:1244K kexin
ao4404.pdf
SMD Type MOSFETN-Channel MOSFETAO4404 (KO4404)SOP-8 Features VDS (V) = 30V ID = 8.5 A (VGS = 10V)1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V)1 Source 5 Drain RDS(ON) 48m (VGS = 2.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
8.2. Size:1701K cn vbsemi
ao4404.pdf
AO4404www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
9.1. Size:332K aosemi
ao4407c.pdf
AO4407C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)
9.2. Size:378K aosemi
ao4405.pdf
AO440530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4405 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
9.3. Size:275K aosemi
ao4402.pdf
AO440220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO4402 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
9.4. Size:207K aosemi
ao4407a.pdf
AO4407A30V P-Channel MOSFETGeneral Description Product SummaryThe AO4407A uses advanced trench technology to VDS = -30Vprovide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)with a 25V gate rating. This device is suitable for use as RDS(ON)
9.5. Size:369K aosemi
ao4403.pdf
AO440330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4403 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -6Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
9.6. Size:372K aosemi
ao4400.pdf
July 2001AO4400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4400 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 8.5Aoperation with gate voltages as low as 2.5V. This RDS(ON)
9.7. Size:343K aosemi
ao4402g.pdf
AO4402G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
9.8. Size:328K aosemi
ao4406a.pdf
AO4406A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4406A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
9.9. Size:340K aosemi
ao4407.pdf
AO440730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-20V) -12Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)
9.10. Size:398K aosemi
ao4405e.pdf
AO4405E30V P-Channel MOSFETGeneral Description Product SummaryVDS -30V Trench Power LV (P-ch) MOSFET technology Low RDS(ON) ID (at VGS=-10V) -6A Low Gate Charge RDS(ON) (at VGS=-10V)
9.11. Size:302K aosemi
ao4409.pdf
AO440930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4409 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)
9.12. Size:2524K kexin
ao4405.pdf
SMD Type MOSFETP-Channel MOSFETAO4405 (KO4405)SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 85m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30
9.13. Size:1484K kexin
ao4402.pdf
SMD Type MOSFETN-Channel MOSFETAO4402 (KO4402)SOP-8 Features VDS (V) = 20V ID = 20 A (VGS = 4.5V)1.50 0.15 RDS(ON) 5.5m (VGS = 4.5V) RDS(ON) 7m (VGS = 2.5V)1 Source 5 Drain6 Drain2 SourceD7 Drain3 Source8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20V Gat
9.14. Size:1643K kexin
ao4407a.pdf
SMD Type MOSFETP-Channel MOSFETAO4407A (KO4407A)SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V)1 Source 5 Drain RDS(ON) 17m (VGS =-6V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
9.15. Size:1498K kexin
ao4406.pdf
SMD Type MOSFETN-Channel MOSFETAO4406 (KO4406)SOP-8 Features VDS (V) = 30VD ID = 11.5 A (VGS = 10V)1.50 0.15 RDS(ON) 14m (VGS = 10V) RDS(ON) 16.5m (VGS = 4.5V)1 Source 5 Drain6 Drain RDS(ON) 26m (VGS = 2.5V) 2 Source7 Drain3 SourceG8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.16. Size:1374K kexin
ao4403.pdf
SMD Type MOSFETP-Channel MOSFETAO4403 (KO4403)SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V)1.50 0.15 RDS(ON) 48m (VGS =-10V) RDS(ON) 57m (VGS =-4.5V)1 Source 5 Drain RDS(ON) 80m (VGS =-2.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
9.17. Size:1564K kexin
ao4408.pdf
SMD Type MOSFETN-Channel MOSFETAO4408 (KO4408)SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V) RDS(ON) 13m (VGS = 10V)1.50 0.15 RDS(ON) 16m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-
9.18. Size:1723K kexin
ao4406a.pdf
SMD Type MOSFETN-Channel MOSFETAO4406A (KO4406A)SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V)1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
9.19. Size:2315K kexin
ao4407.pdf
SMD Type MOSFETP-Channel MOSFETAO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V)1.50 0.15 RDS(ON) 13m (VGS =-20V)D RDS(ON) 14m (VGS =-10V) D1 Source 5 Drain RDS(ON) 30m (VGS =-5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai
9.20. Size:1350K kexin
ao4409.pdf
SMD Type MOSFETP-Channel MOSFETAO4409 (KO4409)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V)1.50 0.15 RDS(ON) 12m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gat
9.21. Size:1565K cn vbsemi
ao4405.pdf
AO4405www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi
9.22. Size:830K cn vbsemi
ao4407a.pdf
AO4407Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
9.23. Size:833K cn vbsemi
ao4406.pdf
AO4406www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
9.24. Size:833K cn vbsemi
ao4408.pdf
AO4408www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
9.25. Size:833K cn vbsemi
ao4406a.pdf
AO4406Awww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
Otros transistores... AO4302
, AO4304
, AO4310
, AO4312
, AO4314
, AO4354
, AO4402
, AO4403
, IRFZ44
, AO4405
, AO4406A
, AO4407
, AO4407A
, AO4409
, AO4410
, AO4411
, AO4413
.
History: 2SK2607
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