AO4419 Todos los transistores

 ..1. Size:268K  aosemi
 ao4419.pdf

AO4419 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4419 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -9.7A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 ..2. Size:1480K  kexin
 ao4419.pdf

SMD Type MOSFET P-Channel MOSFET AO4419 (KO4419) SOP-8 Features VDS (V) =-30V ID =-9.7 A (VGS =-10V) 1.50 0.15 RDS(ON) 20m (VGS =-10V) RDS(ON) 35m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gat

 ..3. Size:832K  cn vbsemi
 ao4419.pdf

AO4419 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G

 9.1. Size:167K  aosemi
 ao4415.pdf

AO4415 30V P-Channel MOSFET General Description Product Summary The AO4415 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -8 A (VGS = -20V) charge. This device is suitable for use as a load RDS(ON)

 9.2. Size:608K  aosemi
 ao4411.pdf

AO4411 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.3. Size:180K  aosemi
 ao4410.pdf

AO4410 30V N-Channel MOSFET General Description Product Summary The AO4410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity, ID = 18A (VGS = 10V) body diode characteristics and ultra-low gate RDS(ON)

 9.4. Size:561K  aosemi
 ao4413.pdf

AO4413 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a ID (at VGS=-20V) -15A 25V gate rating. This device is suitable for use as a load RDS(ON) (at VGS=-20V)

 9.5. Size:1311K  kexin
 ao4415.pdf

SMD Type MOSFET P-Channel MOSFET AO4415 (KO4415) SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-20V) RDS(ON) 26m (VGS =-20V) 1.50 0.15 RDS(ON) 35m (VGS =-10V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-S

 9.6. Size:1241K  kexin
 ao4411.pdf

SMD Type MOSFET P-Channel MOSFET AO4411 (KO4411) SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-10V) RDS(ON) 32m (VGS =-10V) 1.50 0.15 RDS(ON) 55m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-

 9.7. Size:1236K  kexin
 ao4410.pdf

SMD Type MOSFET N-Channel MOSFET AO4410 (KO4410) SOP-8 Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.5m (VGS = 10V) 1.50 0.15 RDS(ON) 6.2m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gat

 9.8. Size:1211K  kexin
 ao4418.pdf

SMD Type MOSFET N-Channel MOSFET AO4418 (KO4418) SOP-8 Features VDS (V) = 30V ID = 11.5 A (VGS = 20V) RDS(ON) 14m (VGS = 20) 1.50 0.15 RDS(ON) 17m (VGS = 10V) RDS(ON) 40m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit D

 9.9. Size:2201K  kexin
 ao4413.pdf

SMD Type MOSFET P-Channel MOSFET AO4413 (KO4413) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) 1.50 0.15 RDS(ON) 7m (VGS =-20V) RDS(ON) 8.5m (VGS =-10V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

 9.10. Size:804K  cn vbsemi
 ao4411.pdf

AO4411 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi