AO4421 Todos los transistores

 ..1. Size:156K  aosemi
 ao4421.pdf

AO4421 60V P-Channel MOSFET General Description Product Summary VDS The AO4421 combines advanced trench MOSFET -60V technology with a low resistance package to provide ID (at VGS=-10V) -6.2A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 ..2. Size:1246K  kexin
 ao4421.pdf

SMD Type MOSFET P-Channel MOSFET AO4421 (KO4421) SOP-8 Features VDS (V) =-60V ID =-6.2 A (VGS =-10V) RDS(ON) 40m (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gat

 9.1. Size:288K  aosemi
 ao4423.pdf

AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide VDS (V) = -30V excellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V) 25V gate rating. This device is suitable for use as a load RDS(ON)

 9.2. Size:169K  aosemi
 ao4427.pdf

AO4427 30V P-Channel MOSFET General Description Product Summary The AO4427 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -12.5 A (VGS = -20V) charge with a 25V gate rating. This device is suitable RDS(ON)

 9.3. Size:165K  aosemi
 ao4420.pdf

AO4420 30V N-Channel MOSFET General Description Product Summary The AO4420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 13.7A (VGS = 10V) and body diode characteristics. This device is RDS(ON)

 9.4. Size:168K  aosemi
 ao4425.pdf

AO4425 38V P-Channel MOSFET General Description Product Summary The AO4425 uses advanced trench technology to VDS (V) = -38V provide excellent RDS(ON), and ultra-low low gate ID = -14A (VGS = -20V) charge with a 25V gate rating. This device is suitable RDS(ON)

 9.5. Size:165K  aosemi
 ao4420a.pdf

AO4420A 30V N-Channel MOSFET General Description Product Summary The AO4420A uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 13.7A (VGS = 10V) and body diode characteristics. This device is RDS(ON)

 9.6. Size:1468K  kexin
 ao4423.pdf

SMD Type MOSFET P-Channel MOSFET AO4423 (KO4423) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) RDS(ON) 7m (VGS =-20V) 1.50 0.15 RDS(ON) 8.5m (VGS =-10V) RDS(ON) 12 m (VGS =- 6 V) 1 Source 5 Drain ESD Rating 3000V HBM 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Par

 9.7. Size:1470K  kexin
 ao4427.pdf

SMD Type MOSFET P-Channel MOSFET AO4427 (KO4427) SOP-8 Features VDS (V) =-30V ID =-12.5 A (VGS =-20V) RDS(ON) 12m (VGS =-20V) 1.50 0.15 RDS(ON) 14m (VGS =-10V) ESD Rating 2000V HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-So

 9.8. Size:1448K  kexin
 ao4420.pdf

SMD Type MOSFET N-Channel MOSFET AO4420 (KO4420) SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V) 1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V G

 9.9. Size:1461K  kexin
 ao4425.pdf

SMD Type MOSFET P-Channel MOSFET AO4425 (KO4425) SOP-8 Features VDS (V) =-38V ID =-14 A (VGS =-20V) RDS(ON) 10m (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-10V) ESD Rating 3000V HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sour

 9.10. Size:821K  cn vbsemi
 ao4423.pdf

AO4423 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S

 9.11. Size:834K  cn vbsemi
 ao4420.pdf

AO4420 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8