AO4427 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4427
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 41 nC
   trⓘ - Tiempo de subida: 10.3 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4427

AO4427 Datasheet (PDF)

..1. Size:169K aosemi
ao4427.pdf

AO442730V P-Channel MOSFETGeneral Description Product SummaryThe AO4427 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -12.5 A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

..2. Size:1470K kexin
ao4427.pdf

SMD Type MOSFETP-Channel MOSFETAO4427 (KO4427)SOP-8 Features VDS (V) =-30V ID =-12.5 A (VGS =-20V) RDS(ON) 12m (VGS =-20V)1.50 0.15 RDS(ON) 14m (VGS =-10V) ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-So

9.1. Size:288K aosemi
ao4423.pdf

AO442330V P-Channel MOSFETGeneral Description Product SummaryThe AO4423 uses advanced trench technology to provide VDS (V) = -30Vexcellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V)25V gate rating. This device is suitable for use as a load RDS(ON)

9.2. Size:165K aosemi
ao4420.pdf

AO442030V N-Channel MOSFETGeneral Description Product SummaryThe AO4420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

9.3. Size:168K aosemi
ao4425.pdf

AO442538V P-Channel MOSFETGeneral Description Product SummaryThe AO4425 uses advanced trench technology to VDS (V) = -38Vprovide excellent RDS(ON), and ultra-low low gateID = -14A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

9.4. Size:156K aosemi
ao4421.pdf

AO442160V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO4421 combines advanced trench MOSFET -60Vtechnology with a low resistance package to provide ID (at VGS=-10V) -6.2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

9.5. Size:165K aosemi
ao4420a.pdf

AO4420A30V N-Channel MOSFETGeneral Description Product SummaryThe AO4420A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

9.6. Size:1468K kexin
ao4423.pdf

SMD Type MOSFETP-Channel MOSFETAO4423 (KO4423)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) RDS(ON) 7m (VGS =-20V)1.50 0.15 RDS(ON) 8.5m (VGS =-10V) RDS(ON) 12 m (VGS =- 6 V)1 Source 5 Drain ESD Rating: 3000V HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Par

9.7. Size:1448K kexin
ao4420.pdf

SMD Type MOSFETN-Channel MOSFETAO4420 (KO4420)SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V)1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G

9.8. Size:1461K kexin
ao4425.pdf

SMD Type MOSFETP-Channel MOSFETAO4425 (KO4425)SOP-8 Features VDS (V) =-38V ID =-14 A (VGS =-20V) RDS(ON) 10m (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-10V) ESD Rating: 3000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour

9.9. Size:1246K kexin
ao4421.pdf

SMD Type MOSFETP-Channel MOSFETAO4421 (KO4421)SOP-8 Features VDS (V) =-60V ID =-6.2 A (VGS =-10V) RDS(ON) 40m (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gat

9.10. Size:821K cn vbsemi
ao4423.pdf

AO4423www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S

9.11. Size:834K cn vbsemi
ao4420.pdf

AO4420www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTP190N65S3HF | FSL130D

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