AO4466 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO4466
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.8 nS
Cossⓘ - Capacitancia de salida: 67 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AO4466 MOSFET
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AO4466 datasheet
ao4466.pdf
AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)
ao4466.pdf
SMD Type MOSFET N-Channel MOSFET AO4466 (KO4466) SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V) 1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate
ao4466l.pdf
AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466/L uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 9.4A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)
ao4468.pdf
AO4468 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Otros transistores... AO4448, AO4449, AO4450, AO4452, AO4453, AO4454, AO4455, AO4459, 12N60, AO4468, AO4476A, AO4478, AO4480, AO4482, AO4484, AO4485, AO4486
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