AO4485 Todos los transistores

 ..1. Size:180K  aosemi
 ao4485.pdf

AO4485 40V P-Channel MOSFET General Description Product Summary The AO4485 uses advanced trench technology to VDS (V) = -40V provide excellent RDS(ON) with low gate charge. This ID = -10A (VGS = -10V) device is suitable for use as a DC-DC converter RDS(ON)

 ..2. Size:1108K  kexin
 ao4485.pdf

SMD Type MOSFET P-Channel MOSFET AO4485 (KO4485) SOP-8 Unit mm Features VDS (V) =-40V ID =-10 A (VGS =-10V) 1.50 0.15 RDS(ON) 15m (VGS =-10V) RDS(ON) 20m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

 9.1. Size:167K  aosemi
 ao4480.pdf

AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to VDS (V) = 40V provide excellent RDS(ON), low gate charge. It is ESD ID = 14A (VGS = 10V) Protected. This device is suitable for use as a low side RDS(ON)

 9.2. Size:199K  aosemi
 ao4482.pdf

AO4482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AO4482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 6A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.3. Size:185K  aosemi
 ao4488.pdf

AO4488 30V N-Channel MOSFET General Description Product Summary The AO4488 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) with low gate charge. ID = 20A (VGS = 10V) This device is ESD protected and it is suitable for RDS(ON)

 9.4. Size:180K  aosemi
 ao4484.pdf

AO4484 40V N-Channel MOSFET General Description Product Summary The AO4484 uses advanced trench technology to VDS (V) = 40V provide excellent RDS(ON) with low gate charge. This is ID = 10A (VGS = 10V) an all purpose device that is suitable for use in a wide RDS(ON)

 9.5. Size:546K  aosemi
 ao4486.pdf

AO4486 100V N-Channel MOSFET General Description Product Summary VDS 100V The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 4.2A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.6. Size:1486K  kexin
 ao4480.pdf

SMD Type MOSFET N-Channel MOSFET AO4480 (KO4480) SOP-8 Unit mm Features VDS (V) = 40V ID = 14 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) 1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V) ESD Rating 4KV HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.7. Size:1120K  kexin
 ao4482.pdf

SMD Type MOSFET N-Channel MOSFET AO4482 (KO4482) SOP-8 Unit mm Features VDS (V) = 100V ID = 6 A (VGS = 10V) RDS(ON) 37m (VGS = 10V) 1.50 0.15 RDS(ON) 42m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100

 9.8. Size:1302K  kexin
 ao4488.pdf

SMD Type MOSFET N-Channel MOSFET AO4488 (KO4488) SOP-8 Unit mm Features VDS (V) = 30V ID = 20 A (VGS = 10V) 1.50 0.15 RDS(ON) 4.6m (VGS = 10V) RDS(ON) 6.4m (VGS = 4.5V) ESD Rating 2KV HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec Steady Sta

 9.9. Size:1290K  kexin
 ao4484.pdf

SMD Type MOSFET N-Channel MOSFET AO4484 (KO4484) SOP-8 Unit mm Features VDS (V) = 40V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 10m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

 9.10. Size:3132K  kexin
 ao4486.pdf

SMD Type MOSFET N-Channel MOSFET AO4486 (KO4486) SOP-8 Unit mm Features VDS (V) = 100V ID = 4.2 A (VGS = 10V) 1.50 0.15 RDS(ON) 79m (VGS = 10V) RDS(ON) 90m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

 9.11. Size:2331K  cn vbsemi
 ao4480.pdf

AO4480 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectificat