AO4498 Todos los transistores

 ..1. Size:185K  aosemi
 ao4498.pdf

AO4498 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AO4498 combines advanced trench MOSFET technology with a low resistance package to provide ID = 18A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)

 ..2. Size:1411K  kexin
 ao4498.pdf

SMD Type MOSFET N-Channel MOSFET AO4498 (KO4498) SOP-8 Unit mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) 1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

 0.1. Size:261K  aosemi
 ao4498e.pdf

AO4498E 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 18A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 0.2. Size:1373K  kexin
 ao4498e.pdf

SMD Type MOSFET N-Channel MOSFET AO4498E (KO4498E) SOP-8 Unit mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.8m (VGS = 10V) 1.50 0.15 RDS(ON) 8.5m (VGS = 4.5V) ESD Rating 2KV HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.1. Size:293K  aosemi
 ao4496.pdf

AO4496 General Description Product Summary The AO4496 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a DC-DC converter RDS(ON)

 9.2. Size:187K  aosemi
 ao4490.pdf

AO4490 30V N-Channel MOSFET General Description Product Summary The AO4490 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 16A (VGS = 10V) operation with gate voltages as low as 4.5V, while RDS(ON)

 9.3. Size:187K  aosemi
 ao4494.pdf

AO4494 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide ID = 18A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON)

 9.4. Size:1040K  aosemi
 ao4492.pdf

AO4492 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4492 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 14A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.5. Size:1690K  kexin
 ao4496.pdf

SMD Type MOSFET N-Channel MOSFET AO4496 (KO4496) SOP-8 Unit mm Features VDS (V) = 30V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 19.5m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

 9.6. Size:1159K  kexin
 ao4490.pdf

SMD Type MOSFET N-Channel MOSFET AO4490 (KO4490) SOP-8 Unit mm Features VDS (V) = 30V ID = 16 A (VGS = 10V) 1.50 0.15 RDS(ON) 7.2m (VGS = 10V) RDS(ON) 10m (VGS = 4.5V) ESD Rating 2KV HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.7. Size:1248K  kexin
 ao4494.pdf

SMD Type MOSFET N-Channel MOSFET AO4494 (KO4494) SOP-8 Unit mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) 1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

 9.8. Size:2037K  kexin
 ao4492.pdf

SMD Type MOSFET N-Channel MOSFET AO4492 (KO4492) SOP-8 Unit mm Features VDS (V) = 30V ID = 14 A (VGS = 10V) 1.50 0.15 RDS(ON) 9.5m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag