AO4498E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO4498E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4498E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4498E (KO4498E)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.8m (VGS = 10V)1.50 0.15 RDS(ON) 8.5m (VGS = 4.5V) ESD Rating: 2KV HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

AO449830V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4498 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

SMD Type MOSFETN-Channel MOSFETAO4498 (KO4498)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

AO4496General Description Product SummaryThe AO4496 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a DC-DC converter RDS(ON)

AO449030V N-Channel MOSFETGeneral Description Product SummaryThe AO4490 uses advanced trench technology toVDS (V) = 30Vprovide excellent RDS(ON), low gate charge andID = 16A (VGS = 10V)operation with gate voltages as low as 4.5V, whileRDS(ON)

AO449430V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4494 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)

AO449230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4492 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 14Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4496 (KO4496)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10 A (VGS = 10V)1.50 0.15 RDS(ON) 19.5m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

SMD Type MOSFETN-Channel MOSFETAO4490 (KO4490)SOP-8Unit:mm Features VDS (V) = 30V ID = 16 A (VGS = 10V)1.50 0.15 RDS(ON) 7.2m (VGS = 10V) RDS(ON) 10m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type MOSFETN-Channel MOSFETAO4494 (KO4494)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

SMD Type MOSFETN-Channel MOSFETAO4492 (KO4492)SOP-8 Unit:mm Features VDS (V) = 30V ID = 14 A (VGS = 10V)1.50 0.15 RDS(ON) 9.5m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag